Atomic layer deposition and application of group III nitrides semiconductor and their alloys

Abstract

Group III nitride semiconductors, such as GaN, AlN, and InN, are a significant class of compound semiconductor materials that have garnered attention due to their unique physicochemical properties. These semiconductors possess excellent characteristics, including a wide direct bandgap, high breakdown field strength, high electron mobility, and good stability, making them known as third-generation semiconductors. Their alloy materials can adjust the bandgap by changing the type or ratio of group III elements, covering a wide range of wavelengths from near-ultraviolet to infrared, enabling wavelength selectivity in optoelectronic devices. Atomic layer deposition (ALD) is a unique technique that produces high-quality Group III nitride films at low temperatures. ALD has become an important method for preparing group III nitrides and their alloys. The alloy composition can be easily controlled by adjusting the ALD cycle ratio. This review highlights recent work on the growth and application of group III nitride semiconductors and their alloys using ALD. The work is summarized according to similarities to make it easier to understand the progress and focus of related research. Firstly, this review summarizes binary nitrides with a focus on their mechanism investigation and application exploration. In the section on mechanism investigation, the review categorizes and summarizes the effects of ALD precursor material, substrate, temperature, ALD type, and other conditions on film quality. This demonstrates the effects of different conditions on film growth behavior and quality. The section on application exploration primarily introduces the use of group III nitride films in various devices through ALD. It analyzes the enhancing effects of group III nitrides on these devices and explores the underlying mechanisms. Additionally, the section discusses the growth of group III nitride alloys through ALD, summarizing different deposition methods and conditions. Regarding the ALD growth of group III nitride semiconductors, there is more research on the ALD growth of AlN and GaN, and relatively less on InN and its alloys. Additionally, there is less research on the ALD growth of GaN for applications, as it is still in the exploratory stage, while there is relatively more research on the ALD growth of AlN for applications. Finally, this review summarizes and provides an outlook on the methods of ALD growth of group III nitride semiconductors and their alloys.