Atomic layer deposition and characterization of Bi1Se1 thin films

He, Shiyang; Bahrami, Amin; Zhang, Xiang; Cichocka, Magdalena Ola; Yang, Jun; Charvot, Jaroslav; Bureš, Filip; Heckel, Alla; Schulz, Stephan; Nielsch, Kornelius

doi:10.1016/j.jeurceramsoc.2023.04.026

Journal of the European Ceramic Society

2023

DOI: 10.1016/j.jeurceramsoc.2023.04.026

|View full text |Cite

Atomic layer deposition and characterization of Bi1Se1 thin films

Shiyang He¹,

Amin Bahrami²,

Xiang Zhang³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

2024

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

SnS₂ Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications

Shin,

Yang,

Mukherjee

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

SnS2 stands out as a highly promising 2D material with significant potential for applications in the field of electronics and photovoltaic technologies. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by doping with various metal ions. Here, a series of Sb‐doped SnS2 is deposited via atomic layer deposition (ALD) super‐cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS2. It is found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS2) to 4.75 eV (Sb‐doped SnS2 with 9:1 ratio). When integrated into photodetectors, the Sb‐doped SnS2 showed improved performance, demonstrating increased peak photoresponsivity values from 19.5 to 27.8 A W−1 at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next‐generation optoelectronic applications based on SnS2.

show abstract

SnS₂ Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications

Shin,

Yang,

Mukherjee

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

show abstract

Low-temperature ALD of highly conductive antimony films through the reaction of silylamide with alkoxide and alkylamide precursors

Bahrami

Zhang

et al. 2023

Materials Today Chemistry

View full text Add to dashboard Cite

Weak antilocalization and gigahertz acoustic phonons in Bi2Se2Te and Bi3Se2Te-dominated thin films grown using pulsed laser deposition

Le,

Tuyen,

Quyen

et al. 2024

Thin Solid Films

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Atomic layer deposition and characterization of Bi1Se1 thin films

Cited by 3 publications

References 34 publications

SnS₂ Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications

SnS₂ Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications

Low-temperature ALD of highly conductive antimony films through the reaction of silylamide with alkoxide and alkylamide precursors

Weak antilocalization and gigahertz acoustic phonons in Bi2Se2Te and Bi3Se2Te-dominated thin films grown using pulsed laser deposition

Contact Info

Product

Resources

About

Atomic layer deposition and characterization of Bi1Se1 thin films

Cited by 3 publications

References 34 publications

SnS2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications

SnS2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications

Low-temperature ALD of highly conductive antimony films through the reaction of silylamide with alkoxide and alkylamide precursors

Weak antilocalization and gigahertz acoustic phonons in Bi2Se2Te and Bi3Se2Te-dominated thin films grown using pulsed laser deposition

Contact Info

Product

Resources

About

SnS₂ Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications

SnS₂ Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applications