Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

Harjuoja, Jenni; Kosola, Anne; Putkonen, Matti; Niinistö, Lauri

doi:10.1016/j.tsf.2005.09.026

Cited by 46 publications

(36 citation statements)

References 56 publications

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“…EDS mapping shows that cracks are through total film thickness, until the Si substrate. This crack indicate that high stress exists in thin film due to lattice mismatch between the film (PbTiO 3 ) and (Si) substrate on cooling [15].…”

Section: Resultsmentioning

confidence: 96%

“…As it was mentioned above the annealing atmosphere content (N 2 , O 2 [15], Ar [20]) and pressure [17] have impact on the solid state reaction and oxidation rate and therefore the surface morphology. Annealing in vacuum was chosen to slow down the oxidation rate and to form PbTiO 3 tetragonal phase by solid state reactions between mixed (PbO and TiO 2 ) phases in thin films without influence of oxygen from environment.…”

Section: Resultsmentioning

confidence: 97%

“…Many fabrication methods do not solve the problem of thin film density, well ordered crystal structure, and stoichiometry of films. Many fabrication methods report about lead loss [13], cracks in microstructure [14], stoichiometry problems [15], and non-uniformity of film surface using solid state reactions by annealing in the air [14][15][16]. There are few ways to improve the morphology of thin films.…”

Section: Introductionmentioning

confidence: 99%

“…There are few ways to improve the morphology of thin films. It is changing the annealing atmosphere content (N 2 , O 2 , Ar) [15]), temperature, and pressure [17].…”

Section: Introductionmentioning

confidence: 99%

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Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Iljinas

Stankus

Kaliasas³

2016

Acta Phys. Pol. A

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This article presents investigation of syntheses of perovskite PbTiO3 thin films by using reactive magnetron layer-by-layer deposition on Si (100) substrate and post-annealing in air and vacuum (p = 5 × 10 −3 Pa). The film stoichiometry was accurately controlled by the deposition of individual layers with the required (≈ 1 nm) thickness, using the substrate periodic moving over targets. Deposited thin films were annealed in air and in vacuum at 670• C and 770• C for 1 h, respectively. The morphological, structural, and chemical properties of thin films deposited at 300• C substrate temperature and post-annealed thin films using either conventional annealing and thermal annealing in vacuum at different temperatures were investigated and compared between. X-ray diffraction measurements of thin films annealed in air show formed crystalline perovskite PbTiO3 phase with tetragonality c/a = 1.047. The crystallite size of oxidized films depends on the substrate temperature. The structure of post annealed in vacuum thin films strongly depends on Pb/Ti atomic ratio. It was observed that the best structure and morphology forms when atomic ratio of Pb/Ti was 0.80. Pseudocubic phase of lead titanate forms with sufficiently low tetragonality at 670• C temperature.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

“…There are few ways to improve the morphology of thin films. It is changing the annealing atmosphere content (N 2 , O 2 , Ar) [15]), temperature, and pressure [17].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Iljinas

Stankus

Kaliasas³

2016

Acta Phys. Pol. A

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“…The self-regulated growth of PbO and TiOx films has already been confirmed [5,6]. Although there are several papers on the ALD of ternary oxide thin films including PbTiOx [6][7][8], the challenge of quaternary oxide deposition by combining three binary ALD processes can hardly be found in the literature.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Pb(Zr,Ti)O<inf>x</inf>, Thin Films by a Combination of Binary Atomic Layer Deposition Processes

Watanabe¹,

Hoffmann‐Eifert²,

Waser³

et al. 2006

2006 IEEE International Symposium on the Applications of Ferroelectrics

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After an evaluation of Zr precursor, quatemary Pb(Zr,Ti)Ox [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrOx films were deposited on Pt/TiOx/SiOx/Si substrates using liquid injection ALD. Zr(CiiH1902)4 [Zr(DPM)4] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to the Arrhenius plot for the deposition rate of ZrOx films at various deposition temperatures, the Zr precursor appeared to start marked thermal decomposition at a deposition temperature of 360°C. Below this thermal decomposition temperature, a saturated deposition rate of ZrOx films against input of Zr precursor was confirmed. The saturated deposition rate was about 5-6x 10-12 mol/cm2 cycle at a deposition temperature of 300°C. Subsequently, binary ALD processes of TiOx and PbO films, whose self-regulated growth mode has been already confirmed, were combined with the ZrOx process into multi-precursor ALD of PZT films. Ti(OC3H7)2(CIIH1902)2 [Ti(Oi-Pr)2(DPM)2] and Pb(C11H1902)2 [Pb(DPM)2] dissolved in ECH with a concentration of 0.1 M were used for PZT film preparation as well as Zr(DPM)4. Unit sequences described as 1 x(Pb-O) -2x(Ti-O) -nx(Zr-O) were repeated to deposit PZT films at 240°C. In the PZT process, the deposition rates of all cations were higher than those in their binary processes. The Pb/(Zr+Ti) and Zr/(Zr+Ti) ratio was adjusted by repeating the number of Zr-O cycles in a sequence. As-deposited PZT films were amorphous. Crystalline PZT films were obtained after annealing at 650°C, and the PZT crystal showed a preferred (100)/(001) orientation.

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Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Winter

Knisley

Kalutarage

et al. 2012

Encyclopedia of Inorganic and Bioinorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors that have been reported since 2004, which corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4– 11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, stable thermally complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation because of the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity because of the importance of several mixed oxide phases and the applications of zirconium oxide and hafnium oxide as high‐permittivity gate materials in microelectronic devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronic devices. The deposition of copper and other first‐row transition‐metal films from metal‐organic precursors is driven by the urgent need for copper metalization procedures in microelectronics device manufacturing. The atomic layer deposition (ALD) growth of the noble metals ruthenium, rhodium, iridium, palladium, and platinum has been a very active research area. The current state of metal‐organic precursor development is presented for each of these metallic elements.

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Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

Cited by 46 publications

References 56 publications

Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Atomic Layer Deposition of Pb(Zr,Ti)O<inf>x</inf>, Thin Films by a Combination of Binary Atomic Layer Deposition Processes

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

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Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

Cited by 46 publications

References 56 publications

Synthesis of PbTiO3Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Synthesis of PbTiO3Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Atomic Layer Deposition of Pb(Zr,Ti)O<inf>x</inf>, Thin Films by a Combination of Binary Atomic Layer Deposition Processes

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

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Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum