Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films

Abstract

Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250°C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O. The lanthanum b-diketonate precursor, La(thd) 3 , was used as the reference precursor.

Rare-earth oxide thin films for gate dielectrics in microelectronics

“…The list of ALD rare-earth oxide processes (Table 3) [34,81,[85][86][87][88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103] already covers all the rare-earth elements [104]. The oxygen precursor most common in ALD processes, H 2 O, does not show chemical activity sufficient for the reaction with ␤-diketonates and films could thus not be obtained using water as the precursor.…”

MOCVD and ALD of High‐k Dielectric Oxides Using Alkoxide Precursors

“…[2] The b-diketonates [79,80] whilst [La(thd) 3 ] (thd = 2,2,6,6-tetramethylheptane-3,5-dionate), [81] [La[N(SiMe 3 ) 2 ] 3 ], [82] and uid-injection MOCVD. [84] The complex is a centrosymmetric dimer with six-coordinate La and four-coordinate Al atoms (see Fig.…”

Growth of crystalline LaAlO3by atomic layer deposition

“…The use of ALD to deposit complex oxides has been reported. [15][16][17][18] We have previously reported the growth of LAO on STObuffered Si(001) by a chemical route. 19 LAO films were grown epitaxially on Si(001) by ALD using a buffer layer of STO grown by MBE.…”