Atomic layer deposition for nanomaterial synthesis and functionalization in energy technology

Meng, Xiangbo; Wang, Xinwei; Geng, Dongsheng; Özgit-Akgün, Çaǧla; Schneider, Nathanaëlle; Elam, Jeffrey W.

doi:10.1039/c6mh00521g

Cited by 151 publications

(99 citation statements)

References 290 publications

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“…ALD is a thin film technique based on a self‐limiting growth mechanism ,,. Initially coined as “atomic layer epitaxy (ALE)” by Suntola et al.…”

Section: An Overview On Ald and Mldmentioning

confidence: 99%

“…in the 1970s, ALD has been bearing the name “atomic layer deposition” since the beginning of the 21 st century, when it was discovered to have great potentials for nanoscience and nanotechnology. Originally invented for semiconductor industries, ALD now has greatly expanded its applications into catalysis, renewable clean energies (e. g., batteries, solar cells, fuel cells, supercapacitors, and water splitting),,,, biomedical, surface engineering, and many others . All these are owing to ALD's distinguished capabilities in synthesizing novel materials at the atomic level.…”

Section: An Overview On Ald and Mldmentioning

confidence: 99%

See 1 more Smart Citation

Atomic and Molecular Layer Deposition for Superior Lithium‐Sulfur Batteries: Strategies, Performance, and Mechanisms

Sun

Lau

Geng

et al. 2018

Batteries & Supercaps

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sulfur (LiÀS) batteries hold great promise for powering future electric vehicles, given their high theoretical specific energy of 2600 Wh/kg and low cost. However, the commercialization of LiÀS batteries is being hindered by several serious technical challenges including the corrosion of lithium metal anodes, the formation of lithium dendrites, the shuttle effect of lithium polysulfides, the decomposition of electrolyte, and low conductivity of sulfur and lithium sulfide. In the past decade, atomic layer deposition (ALD) as a new research thrust has been demonstrated to be a very effective technique in dramatically improving the performance of lithium-ion batteries (LIBs), featuring many unique advantages in fabricating sub-nano to nanoscale inorganic films. Stimulated by ALD's benefits, recently more and more research efforts have been reported in ALD for addressing the technical issues of LiÀS batteries and show very promising outcomes. Analogous to ALD, molecular layer deposition (MLD) is a thin-film technique exclusively for polymeric films. Some of the latest studies have uncovered that MLD is an alternative tool for tackling the challenges of LiÀS batteries with exceptional effectiveness. In this review, for the first time, we systematically summarized the progresses of both ALD and MLD in developing superior LiÀS batteries, covering their technical strategies, resulting performance, and the underlying mechanisms. In terms of the functionalities of ALD and MLD in LiÀS batteries, we focus our discussion in two main complementary aspects: (i) surface coatings and (ii) electrode designs.[a] Q. polysulfide, Li 2 S 8 , and the subsequent reductions of Li 2 S 8 to low order polysulfides Li 2 S n (3 n 6), corresponding to the decreasing voltage slope from 2.2 V to~2.1 V. While the lower voltage plateau (1.9-2.1 V) is ascribed to the reductions from the soluble low-order polysulfides (Li 2 S n , 3 n 6) to the insoluble Li 2 S 2 or Li 2 S. During the final stage of a discharge process, the reduction from Li 2 S 2 to Li 2 S is the main reaction step. In a charging process, the discharge product, Li 2 S is oxidized and then finally changed into S 8 .However, LiÀS batteries suffer from a series of major challenges in practice. [20a,f,23] First, the lithium electrode is prone to present heterogeneous deposition and dissolution during charge-discharge processes. In addition, lithium is likely to grow into dendritic structures [24] and the resulting dendrites pose serious risks to the cell safety. The dendritic lithium is possible to penetrate the separator, reach the cathode side, and then short the cell. [24e,25] Second, lithium metal anodes tend to experience corrosion in contact with liquid organic electrolytes such as the widely applied mixture of dioxolane (DOL) and dimethoxyethane (DME), leading to the formation of some gaseous and solid by-products, i. e., solid electrolyte interphase (SEI). [26] The formation of SEI consumes lithium and electrolytes. This may increase cell impedance and lead to the final failu...

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“…ALD is a thin film technique based on a self‐limiting growth mechanism ,,. Initially coined as “atomic layer epitaxy (ALE)” by Suntola et al.…”

Section: An Overview On Ald and Mldmentioning

confidence: 99%

Section: An Overview On Ald and Mldmentioning

confidence: 99%

Atomic and Molecular Layer Deposition for Superior Lithium‐Sulfur Batteries: Strategies, Performance, and Mechanisms

Sun

Lau

Geng

et al. 2018

Batteries & Supercaps

Self Cite

View full text Add to dashboard Cite

show abstract

“…Atomic layer deposition (ALD), which was developed and introduced worldwidely in the late of 1970s, is a widely used method for TFE in nowadays. Compared to the conventional CVD, the coatings deposited by ALD show excellent properties owing to its sequential self-limiting surface reactions and good conformality with atomic-level thickness control [77,78]. Based on these properties, ALD thin films can provide much lower permeability.…”

Section: Plasma Enhanced Chemical Vapor Deposition (Pecvd) and Plasmamentioning

confidence: 99%

Recent progress on non-thermal plasma technology for high barrier layer fabrication

Sang

Wang

Liu

et al. 2018

Plasma Sci. Technol.

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This review describes the application of non-thermal plasma (NTP) technology for high barrier layer fabrication in packaging area. NTP technology is considered to be the most prospective approaches for the barrier layer fabrication over the past decades due to unpollution, high speed, low-costing. The applications of NTP technology have achieved numerous exciting results in high barrier packaging area. Now it seemly demands a detailed review to summarize the past works and direct the future developments. This review focuses on the different NTP resources applied in the high barrier area, the role of plasma surface modification on packaging film surface properties, and the deposition of different barrier coatings based on NTP technology. In particular, this review emphasizes the cutting-edge technologies of NTP on interlayer deposition with organic, inorganic for multilayer barriers fabrication. The future prospects of NTP technology in high barrier film areas are also described.

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“…Although excellent review articles on general ALD overview [3][4][5][6][7][8], specific ALD methods [9][10][11], nano-materials [12][13][14][15], and application areas [16][17][18][19] exist in the literature, an effort focusing on ALD-grown nanoscale semiconductors and their applications is yet missing. The aim of this review is to present the status and summary of the ALD semiconductor research activity by covering critical findings and contributions in the field.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

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Atomic layer deposition for nanomaterial synthesis and functionalization in energy technology

Abstract: This review article summarizes the recent progress of atomic layer deposition (ALD) in energy technologies including rechargeable secondary batteries, fuel cells, photovoltaics, and optoelectronics.

Cited by 151 publications

References 290 publications

Atomic and Molecular Layer Deposition for Superior Lithium‐Sulfur Batteries: Strategies, Performance, and Mechanisms

Atomic and Molecular Layer Deposition for Superior Lithium‐Sulfur Batteries: Strategies, Performance, and Mechanisms

Recent progress on non-thermal plasma technology for high barrier layer fabrication

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

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