2022
DOI: 10.1007/s40684-022-00419-x
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Atomic Layer Deposition for Thin Film Solid-State Battery and Capacitor

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Cited by 7 publications
(2 citation statements)
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“…[179,[181][182][183][184][185][186][187][188][189][190][191] Several remarkable reviews primarily concentrated on ALD-based electrode materials for rechargeable batteries. [192][193][194][195][196][197][198][199][200][201][202][203][204][205] Among these, several notable reviews have been primarily dedicated to exploring ALD-based electrode materials in the context of rechargeable batteries. Such investigations are crucial in our pursuit of improved energy storage solutions, and these comprehensive analyses have significantly advanced our understanding in this area.…”
Section: Ald Applications For Scsmentioning
confidence: 99%
“…[179,[181][182][183][184][185][186][187][188][189][190][191] Several remarkable reviews primarily concentrated on ALD-based electrode materials for rechargeable batteries. [192][193][194][195][196][197][198][199][200][201][202][203][204][205] Among these, several notable reviews have been primarily dedicated to exploring ALD-based electrode materials in the context of rechargeable batteries. Such investigations are crucial in our pursuit of improved energy storage solutions, and these comprehensive analyses have significantly advanced our understanding in this area.…”
Section: Ald Applications For Scsmentioning
confidence: 99%
“…Electrostatic or dielectric capacitors are drawing much interest for use in electronic circuits and electromagnetic devices owing to their fast charge/discharge rates and high power densities. High- k thin films are essential components of thin film electrostatic capacitors and can significantly improve the energy and power densities of their bulk counterparts. Titanium oxide (TiO 2 ) is one of the most interesting high- k materials in such applications owing to its extremely high dielectric constant, which is associated with crystallinity and phase; for example, the rutile-TiO 2 film is well-known for its higher dielectric constant (90–170) than amorphous (<30) and anatase-TiO 2 (30–75). However, the relatively low energy band gap ( E g of 3.2 eV) of TiO 2 films at the expense of such high permittivity often necessitates lamination with lower- k /higher- E g (e.g., SiO 2 and Al 2 O 3 ) films.…”
Section: Introductionmentioning
confidence: 99%