Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Cheng, Yi-Lung; Kao, Kai-Chieh; Huang, Chi-Jia; Chen, Giin-Shan; Fang, Jau–Shiung

doi:10.1016/j.apsusc.2015.02.070

Cited by 11 publications

(3 citation statements)

References 20 publications

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“…It should be noted that the HfO 2 ALD was used as a test case for surface reactivity. Although hafnium oxide thin films have been proposed and tested for pore-sealing and as Cu diffusion barriers on low-k materials, , the current trend is to search for other materials, including thin ruthenium or manganese-based films, for this purpose. ,− The next step in this research should be to test the selectivity of surfaces treated with our silylation and UV/ozonolysis procedure for the chemical deposition of such films. Nevertheless, we believe that the results reported here are quite general and that the proposed procedure should work with most CVD and ALD processes provided that proper precursors are used to minimize nucleation problems .…”

Section: Resultsmentioning

confidence: 99%

Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

Guo

Qin

Zaera

2016

ACS Appl. Mater. Interfaces

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A protocol has been developed to selectively process low-k SiCOH dielectric substrates in order to activate or deactivate them toward the deposition of thin solid films by chemical (CVD or ALD) means. The original SiCOH surfaces are hydrophobic, an indication that they are alkyl- rather than silanol-terminated and that, consequently, they are fairly unreactive. However, the chemical-mechanical polishing (CMP) sometimes done during microelectronics fabrication renders them hydrophilic and reactive. It was shown here that silylation of the CMP-treated surfaces with any of a number of well-known silylation agents such as HMDS, ODTS, or OTS caps the reactive silanol surface groups and turns them back to being hydrophilic and unreactive. Further exposure of any of the passivated surfaces to a combination of ozone and UV radiation reinstates their hydrophilicity and chemical activity. Importantly, it was also demonstrated that all these changes could be induced without altering the original mechanical, optical, or electrical properties of the samples: atomic force microscopy (AFM) images show no increase in roughness, ellipsometry measurements yield the same values for the index of refraction and dielectric constant, and infrared absorption spectroscopy attests to the preservation of the organic fragments present in the original SiCOH samples. The chemical selectivity of the resulting surfaces was tested for the atomic layer deposition (ALD) of HfO2 films, which could be grown only on the UV/O3 treated substrates.

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Section: Resultsmentioning

confidence: 99%

Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

Guo

Qin

Zaera

2016

ACS Appl. Mater. Interfaces

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“…The deposition temperature, pressure, and power were 300 • C, 1.0 × 10 4 Pa, and 600 W, respectively. Following, UV curing with 200~450 nm wavelength was performed to remove the organic porogen in order to form the porous low-k dielectric film [18,19]. The average pore size and porosity of the porous low-k material were 1.35 nm and 15.0%, respectively, which were determined from the isotherm of ethanol adsorption and desorption using ellipsometric porosimetry.…”

Section: Methodsmentioning

confidence: 99%

In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment

2021

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Plasma damage and metal ion penetration are critical issues for porous low-dielectric-constant (low-k) materials used in the back-end-of-line interconnects. This study proposed a novel process with in-situ repairing plasma-induced damage and capping a barrier for porous low-k materials by Hexamethyldisilazane (HDMS) plasma treatment. For a plasma-damaged porous low-k material, its surface hydrophilic state was transformed to hydrophobic state by HDMS plasma treatment, revealing that damage was repaired. Simultaneously, a dielectric film was capped onto the porous low-k material, and displayed better barrier capability against Cu migration. Additionally, the breakdown reliability of the stacked dielectric was enhanced by the means of HDMS plasma treatment. The optimized HDMS plasma treatment time was found to be 10 s. Therefore, this proposed HDMS plasma treatment processing is a promising technique for highly applicable low-k material used for advanced technology nodes.

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“…This provides a fast penetration pathway for gases, liquids, or other deposition precursors to enter the dielectric film, causing electrical characteristics and reliability of the porous low-k dielectrics [10,11]. As a result, for the successful integration of highly porous low-k dielectrics into the BEOL interconnects, pore-stuffing or pore-sealing processing is required as ways of plasma treatment, dielectric capping, or self-assembled monolayers (SAMs) [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

et al. 2019

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Highly porous low-dielectric-constant (low-k) dielectric materials with a dielectric constant (k) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-k dielectric film with a k value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-k dielectric films were characterized. As SAMs were formed onto the highly porous low-k dielectric film by APTMS treatment, the dielectric breakdown field and the failure time were significantly improved, but at the expense of the increases in the dielectric constant and leakage current. Moreover, the formation SAMs enhanced the Cu barrier performance for highly porous low-k dielectric films. Therefore, the SAMs derived from APTMS treatment are promising for highly porous low-k dielectric films to ensure better integrity.

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Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Cited by 11 publications

References 20 publications

Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment

Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

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