Atomic layer deposition

Ritala, Mikko; Leskelä, Markku

doi:10.1016/b978-012512908-4/50005-9

Cited by 540 publications

(514 citation statements)

References 363 publications

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“…As discussed above, compared with conventional PVD method, films prepared by ALD enables excellent thickness controllability, reproduc ibility, wafer level uniformity, and high conformity. [16] Under optimized deposition conditions, MoO 3 films thickness could be controlled through changing ALD cycles ( Figure S1a,b, Supporting Information). Besides, smooth surfaces (R q , arithmetic average of absolute values ≈0.21 nm, Figure S1c-f (Supporting Information)) ensures the uniformity and high quality of the subsequent MoS 2 .…”

Section: Resultsmentioning

confidence: 99%

“…It is very promising for large scale synthesis and applications of TMDCs which requires excellent thickness controllability and wafer level uniformity. [16] The MoS 2 films were further characterized using Raman spectroscopy, photoluminescence (PL), X ray diffraction (XRD), and X ray photoemission spectroscopy (XPS shown in Figure 2c. For the 15 cycle sample, specific Raman peaks, in plane (E 1 2g ) and out of plane (A 1g ) peaks, have been observed at 385.0 and 405.2 cm −1 , respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Due to the surface saturated and self limiting growth mechanism, growth of nanometer level ultrathin film with lateral dimen sion over 300 mm can be enabled with ALD technique. [16] This is exactly the reason that ALD was adopted by the industry for ultrathin material depositions. [17] So far, synthesis for high quality MoS 2 films by sulfurizing MoO 3 deposited by ALD have rarely been reported.…”

Section: Introductionmentioning

confidence: 98%

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Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Shi

Chen

Zhang

et al. 2017

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in logic circuits and CMOS applications. In particular, mono layer MoS 2 has a direct band gap of 1.9 eV, which makes it promising for optoelectronics applications such as photode tector or light emission diode (LED). [2] To date, most experimental research focus on the 2D sem iconductors mechanically exfoliated from bulk material, sim ilar to the approach for graphene studies. This is because the mechanical exfoliation (mostly "scotch tape" method) not only enables a high quality single crystal 2D semiconductor sample with least defects, but also limits the fabrication steps in which the ultrathin 2D sample can be damaged or con taminated. High performance field effect transistors (FETs) based on exfoliated TMDCs have been fabricated and found to exhibit large On/Off current ratio (over 10 7 ), high elec tron mobility (exceeding 200 cm 2 V −1 s −1 ) and small cutoff current (less than 1 pA). [8,9]

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Shi

Chen

Zhang

et al. 2017

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“…In ALD, the deposition occurs through self-limiting chemical reactions, promoting the formation of films with smooth surface. A good chemical quality of the deposited layers, and chemical stability between two layers of different nature are expected [3]. ALD is a powerful method for the deposition of binary and more complex oxides.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Magnetic Thin Films

Mantovan¹,

Georgieva²,

Perego³

et al. 2007

Acta Phys. Pol. A

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We report on the research effort towards the development of processes for the realization of magnetic tunnel junctions by atomic layer deposition. Our strategy follows two main schemes. The first is a hybrid process where the ferromagnetic layers are produced by chemical vapour deposition and the tunnel oxide is deposited by atomic layer deposition. As ferromagnetic electrodes we use Co and Fe3O4, while MgO, Al2O3, and HfO2 are employed as tunnel oxides. The second and most intriguing scheme is a full-oxide approach in which the ferromagnetic layers and the tunnel barrier layer are all oxides grown by atomic layer deposition. As ferromagnetic layers we focused on the growth of complex manganites (La 0.7 Sr 0.3 MnO 3 ) while as a tunnel oxide we propose La2O3. Film composition has been studied with time of flight secondary ion mass spectroscopy and Rutherford backscattering spectrometry. X-ray diffraction, X-ray reflectivity, and Fourier transform infrared spectroscopy have been used to investigate the structure and morphology of the layers. The magnetic properties of the films are measured by superconducting quantum interference device magnetometer.

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“…4,[8][9][10] Sequentially employing two self-limiting surface reactions, a submonolayer of material is deposited per ALD cycle and the process is proven to yield excellent uniformity and conformality. [11][12][13] Since different TaN x crystal phases exist including low-resistivity cubic TaN and very-high-resistivity Ta 3 N 5 , 14 successful integration of TaN x films synthesized by ALD requires control over film stoichiometry and composition.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Langereis

Knoops

Mackus

et al. 2007

Journal of Applied Physics

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Remote plasma atomic layer deposition (ALD) of TaNx films from Ta[N(CH3)2]5 and H2, H2-N2, and NH3 plasmas is reported. From film analysis by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, atomic composition, mass density, TaNx microstructure, and resistivity are presented for films deposited at substrate temperatures between 150 and 250°C. It is established that cubic TaNx films with a high mass density (12.1gcm−3) and low electrical resistivity (380μΩcm) can be deposited using a H2 plasma with the density and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. It is demonstrated that the different TaNx phases can be distinguished in situ by spectroscopic ellipsometry on the basis of their dielectric function with the magnitude of the Drude absorption yielding information on the resistivity of the films. In addition, the saturation of the ALD surface reactions can be determined by monitoring the plasma emission, as revealed by optical emission spectroscopy.

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Atomic layer deposition

Cited by 540 publications

References 363 publications

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Atomic Layer Deposition of Magnetic Thin Films

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

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