2014
DOI: 10.1063/1.4901899
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Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Abstract: Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition (ALD) were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10 19 to 10 20 cm -3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10 19 to 10 14 cm -3 for S/(Zn+Al) = 0.34, and decreased even further when S/(Zn+Al) > 0.34. Such tunable electr… Show more

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Cited by 19 publications
(14 citation statements)
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“…No unreacted In 2 O 3 or no phase separation into ZnO and ZnS were observed from the spectra, except a peak shift, which was observed towards lower 2θ due to the lattice expansion originated from the substitution of oxygen by sulphur. The peak profile fitting shows that the estimated lattice constants increase from a = b = 3.25 Å and c = 5.21 Å in ZnO to a = b = 3.26 Å and c = 5.22 Å in the Zn(O,S) that agrees well with previous reports [10,15]. A preferred orientation along the (002) direction was evolved for indium concentration up to 3 wt%, giving a grain growth perpendicular to the substrate surface.…”
Section: Structural and Morphological Studiessupporting
confidence: 91%
See 1 more Smart Citation
“…No unreacted In 2 O 3 or no phase separation into ZnO and ZnS were observed from the spectra, except a peak shift, which was observed towards lower 2θ due to the lattice expansion originated from the substitution of oxygen by sulphur. The peak profile fitting shows that the estimated lattice constants increase from a = b = 3.25 Å and c = 5.21 Å in ZnO to a = b = 3.26 Å and c = 5.22 Å in the Zn(O,S) that agrees well with previous reports [10,15]. A preferred orientation along the (002) direction was evolved for indium concentration up to 3 wt%, giving a grain growth perpendicular to the substrate surface.…”
Section: Structural and Morphological Studiessupporting
confidence: 91%
“…In general, for buffer layer, a carrier concentration in the range of 10 14 -10 16 cm −3 is desirable, as the higher carrier concentration leads to higher carrier recombination in the absorber [13]. However, the Zn(O,S) layer with a higher carrier concentration can be effective for the portion of the buffer layer closer to the TCO to reduce its contact (and hence series) resistance [14,15]. It is known that a graded buffer layer (n/n ++ ) with increasing carrier concentration from the absorber to the TCO layer enhances the carrier collection efficiency in the thin film solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…The bulk electrical conductivities were measured by four‐point probe in a pelletized form and also by a method proposed in the work of Dunn and co‐workers (see also Figure S5, Supporting Information). The DC conductivity of black TiO 2 (10 −2 –10 −1 S cm −1 ) is, at least, five orders of magnitude higher than that of the control TiO 2 (10 −8 –10 −7 S cm −1 ) which may originate from the Ti 3+ ions that generate shallow donor levels just below the conduction band minimum, giving rise to the n‐type conductivity …”
Section: Resultsmentioning
confidence: 97%
“…[53,54] In addition, similar absorption features from partial electron yield and total electron yield (TEY) indicate that such reduction of Ti 4+ not only occurs in the outermost surface of TiO 2 , given that the detection depth in a TEY mode extends to a few nanometers. [33,63] The scanning electron microscopy (SEM) images of Figure 2e,f exhibit that the electrode consists of mesoporous frameworks or layers which provide reaction site for oxygen reduction. [50,51,59,60] Raman spectroscopy (Figure 2d) also confirms the TiO 2−x structure.…”
Section: Synthesis and Characterization Of Hierarchically Ordered Pormentioning
confidence: 99%
“…Atomic layer deposition (ALD) is a powerful tool for growing reproducible conformal pinhole-free high-quality thin-films of inorganic materials. ALD has the advantage of precise fine control of the film thickness and materials properties, such as stoichiometry, morphology, and doping [ 11 , 12 , 13 , 14 , 15 ]. While chemical vapor deposition (CVD) and physical vapor deposition (PVD), including thermal evaporation, e-beam evaporation, molecular beam epitaxy, pulsed laser deposition, and sputtering, have been popular deposition methods in industry, ALD has gained much attention with ultra-thin or pinhole-free conformal coating becoming more important.…”
Section: Introductionmentioning
confidence: 99%