Atomic Layer Deposition of Aluminum Nitride and Oxynitride on Silicon Using Tris(dimethylamido)aluminum, Ammonia, and Water

Абдулагатов, А. И.; Amashaev, R. R.; Ashurbekova, Kr. N.; Рабаданов, М. Х.; Abdulagatov, Ilmutdin M.

doi:10.1134/s1070363218080236

Cited by 19 publications

(13 citation statements)

References 35 publications

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“…The higher growth rate observed at 280 °C was mainly attributed to the organo-metallic precursor decomposition and hence a chemical vapor deposition (CVD) reaction mechanism was suspected for observing such a high growth rate. Additionally, it was also demonstrated that the impurity, such as carbon and oxygen content, in nitride film deposited using hydrazine was comparable or lower when compared to films deposited using NH 3 [ 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.

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Section: Introductionmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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“…[ 138,139 ] The surfaces coated with AlO x N y films showed better surface recombination velocity due to the collective effect of field‐effect passivation by the presence of fixed negative charges, and chemical passivation owing to hydrogen within the film. [ 137,138 ]…”

Section: State‐of‐the‐art Mixed‐anion Ald Thin Filmsmentioning

confidence: 99%

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Tripathi

Karppinen

2021

Adv Materials Inter

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For decades the most successful approach towards new inorganic material innovations for next‐generation devices has been to manipulate the cation composition. As this cation‐centric material development is inevitably approaching its saturation, new chemistries are needed to maintain the pace of technological progress. One of the new chemistry approaches is to play with the anions instead of the cations. Moreover, advances in fabrication techniques are needed to address the endeavors to shrink the device and component dimensions. Here, the combination of mixed‐anion chemistries, such as oxychalcogenides or carbopnictides, and the state‐of‐the‐art atomic layer deposition (ALD) thin‐film technology are highlighted. The unique bottom‐up material building mode of ALD can lead to scientifically exciting but at the same time industry‐feasible material innovations. In this brief review, the present status and prospects, and the challenges of this emerging field are discussed.

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“… 5 , 6 Replacing the Al–C of AlMe 3 with more reactive Al–N bonds has led to homoleptic tricoordinated amide precursors (Al(NMe 2 ) 3 ) 14 and (Al(NEt 2 ) 3 ), 15 which have been used to deposit AlN by ALD. 16 − 19 Although these precursors are highly volatile and reactive, the low thermal stability of the deposited surface species renders films with carbon impurities. 20…”

Section: Introductionmentioning

confidence: 99%

“…To maximize the growth rate of a thin film, a precursor must be sufficiently volatile and have ligands of low steric bulk for fast surface saturation and maximum density of the deposited precursor. Due to its high volatility and reactivity, trimethylaluminum (AlMe 3 ) has been used to deposit AlN by ALD. − These films contain high levels of carbon impurities due to the strong Al–C bonds, making it difficult to remove all of the methyl ligands of the deposited precursor at low temperatures. , Replacing the Al–C of AlMe 3 with more reactive Al–N bonds has led to homoleptic tricoordinated amide precursors (Al(NMe 2 ) 3 ) and (Al(NEt 2 ) 3 ), which have been used to deposit AlN by ALD. − Although these precursors are highly volatile and reactive, the low thermal stability of the deposited surface species renders films with carbon impurities…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Thermal Study of Hexacoordinated Aluminum(III) Triazenides for Use in Atomic Layer Deposition

et al. 2021

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Amidinate and guanidinate ligands have been used extensively to produce volatile and thermally stable precursors for atomic layer deposition. The triazenide ligand is relatively unexplored as an alternative ligand system. Herein, we present six new Al(III) complexes bearing three sets of a 1,3-dialkyltriazenide ligand. These complexes volatilize quantitatively in a single step with onset volatilization temperatures of ∼150 °C and 1 Torr vapor pressures of ∼134 °C. Differential scanning calorimetry revealed that these Al(III) complexes exhibited exothermic events that overlapped with the temperatures of their mass loss events in thermogravimetric analysis. Using quantum chemical density functional theory computations, we found a decomposition pathway that transforms the relatively large hexacoordinated Al(III) precursor into a smaller dicoordinated complex. The pathway relies on previously unexplored interligand proton migrations. These new Al(III) triazenides provide a series of alternative precursors with unique thermal properties that could be highly advantageous for vapor deposition processes of Al containing materials.

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Atomic Layer Deposition of Aluminum Nitride and Oxynitride on Silicon Using Tris(dimethylamido)aluminum, Ammonia, and Water

Cited by 19 publications

References 35 publications

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Synthesis and Thermal Study of Hexacoordinated Aluminum(III) Triazenides for Use in Atomic Layer Deposition

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