2012
DOI: 10.1021/jp205222g
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Atomic Layer Deposition of Aluminum and Titanium Phosphates

Abstract: The atomic layer deposition (ALD) of phosphate containing thin films using reactions between the metal halide and the phosphorus source without any additional oxygen sources was examined. Two very common metal halides, AlCl 3 and TiCl 4 , were used in conjunction with trimethyl phosphate (TMPO) to grow corresponding metal phosphate films. Aluminum phosphate thin films were deposited at temperatures between 150 and 400 °C while titanium phosphate films grew between 275 and 450 °C. Amorphous films of Al 2.6 PO 7… Show more

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Cited by 35 publications
(30 citation statements)
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References 24 publications
(49 reference statements)
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“…AlPO 4 has been shown to be superior to metal oxides as a coating layer in cathode materials, due to the strong covalency of PO 4 polyanions with the Al 3+ in AlPO 4 [104]. ALD recipes for metal phosphates have been developed [105][106][107]. Other types of potential coating materials are ionic and/or electronic conductors, which are expected to prevent unwanted side reactions and at the same time improve diffusion of lithium ions and/or electrons through the coating layers.…”
Section: Ald Of Surface Engineeringmentioning
confidence: 99%
“…AlPO 4 has been shown to be superior to metal oxides as a coating layer in cathode materials, due to the strong covalency of PO 4 polyanions with the Al 3+ in AlPO 4 [104]. ALD recipes for metal phosphates have been developed [105][106][107]. Other types of potential coating materials are ionic and/or electronic conductors, which are expected to prevent unwanted side reactions and at the same time improve diffusion of lithium ions and/or electrons through the coating layers.…”
Section: Ald Of Surface Engineeringmentioning
confidence: 99%
“…We have recently examined ALD of aluminum and titanium phosphates by using trimethyl phosphate (TMPO) and the corresponding metal halides without any separate oxygen source. 26 In this study we will make a similar approach to lithium phosphate thin films and use TMPO with two lithium precursors, namely lithium tertbutoxide (LiO t Bu) and lithium hexamethyldisilazide [LiHMDS, also known as lithium bis(trimethylsilyl)amide]. Earlier only the lithium bis(ethyldimethylsilyl)amide and diisopropylphosphate combination has been mentioned in the patent literature for ALD of lithium phosphate.…”
mentioning
confidence: 99%
“…) for the LaPO 4 thin film ALD system. The optimization was performed at 275 °C, well inside previously reported ALD windows of lanthanum and phosphate systems using equivalent precursors . When varying the pulsing duration for the precursor under investigation, all other pulse and purge times were kept at 5 s. After optimization, a La(thd) 3 pulse of 1 s was deemed sufficient, whereas TMPO and O 3 /H 2 O pulses were set to 2 s. These pulse durations have been used throughout the remainder of the experiments.…”
Section: Resultsmentioning
confidence: 99%
“…Thin film depositions of phosphates by ALD have not yet been extensively studied. Reports have been made of the deposition of lithium phosphate, iron phosphate, titanium phosphate, and aluminum phosphate . These materials have mainly been studied as potential electrolytes or as cathodes in Li‐ion batteries.…”
Section: Introductionmentioning
confidence: 99%