Atomic layer deposition of aluminum-doped zinc oxide films for the light harvesting enhancement of a nanostructured silicon solar cell

Chen, Sheng Hui; Chan, Shih Hao; Chen, Chun Ko; Tseng, Shao Ze; Hsu, Chieh-Hsiang; Cho, Wen Hao

doi:10.1116/1.4767837

Cited by 3 publications

(2 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The most extensively investigated ternary ALD process is the ZnAl x O y process, also known as Al-doped ZnO or AZO, on which more than 55 papers have been published in the literature. ,,,,,, , − This process has been considered for many applications, such as transparent conducting oxides (TCO), , active material in thin-film transistors, ,, and anodes in organic light emitting diodes. , The majority of these papers focused on optimization of the optical and electrical properties, by varying the deposition conditions and the supercycle parameters. The popularity of this process is also because it combines two well-studied binary ALD processes (TMA/H 2 O and DEZ/H 2 O) which are available in many laboratories.…”

Section: Nucleation Effects During the Growth Of Ternary Materialsmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

View full text Add to dashboard Cite

In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the film thickness at the atomic level. The current applications of ALD primarily involve binary metal oxides, but for new applications there is increasing interest in more complex materials such as doped, ternary, and quaternary materials. This article reviews how these multicomponent materials can be synthesized by ALD, gives an overview of the materials that have been reported in the literature to date, and discusses important challenges. The most commonly employed approach to synthesize these materials is to combine binary ALD cycles in a supercycle, which provides the ability to control the composition of the material by choosing the cycle ratio. Discussion will focus on four main topics: (i) the characteristics, benefits, and drawbacks of the approaches that currently exist for the synthesis of multicomponent materials, with special attention to the supercycle approach; (ii) the trends in precursor choice, process conditions, and characterization methods, as well as underlying motivations for these design decisions; (iii) the distribution of atoms in the deposited material and the formation of specific (crystalline) phases, which is shown to be dependent on the ALD cycle sequence, deposition temperature, and post-deposition anneal conditions; and (iv) the nucleation effects that occur when switching from one binary ALD process to another, with different explanations provided for why the growth characteristics often deviate from what is expected. This paper provides insight into how the deposition conditions (cycle sequence, temperature, etc.) affect the properties of the resultant thin films, which can serve as a guideline for designing new ALD processes. Furthermore, with an extensive discussion on the nucleation effects taking place during the growth of ternary materials, we hope to contribute to a better understanding of the underlying mechanisms of the ALD growth of multicomponent materials.

show abstract

Section: Nucleation Effects During the Growth Of Ternary Materialsmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

View full text Add to dashboard Cite

show abstract

“…The goal was to grow orderly nanochannel arrays in a simpler and more useful fashion. A nanochannel template was applied for the masking of antireflectance structures on a large area [12] for the production of omnidirectional reflectors [13]. Finally, periodic copper particles with larger periods were grown in the MES nanochannel arrays on fluorine doped tin oxide (FTO) glass and the absorption of the spectrum was in the visible region due to SPR.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Orderly Copper Particle Arrays on a Multi‐Electrolyte‐Step Anodic Aluminum Oxide Template

Chen

Chan

Lee

et al. 2013

Journal of Nanomaterials

Self Cite

View full text Add to dashboard Cite

A multi-electrolyte-step (MES) anodic aluminum oxide (AAO) method was used to achieve nanochannel arrays with good circularity and periodic structure. The nano-channel array fabrication process included immersion in a phosphoric acid solution with a 120–150 bias voltage. Bowl-shaped structures were then formed by removing the walls of the nano-channel arrays. The nano-channel arrays were grown from the bottom of the bowl structure in an oxalic solution using a 50 V bias voltage. A comparison of this new MES process with the one-step and five-step AAO process showed a 50% improvement in the circularity over the one-step process. The standard deviation of the average period in the MES array was 25 nm which is less than that of one-step process. This MES method also took 1/4 of the growing time of the five-step process. The orderliness of the nano-channel arrays for the five-step and MES process was similar. Finally, Cu nanoparticle arrays with a 200 nm period were grown using an electroplating process inside the MES nano-channel arrays on fluorine doped tin oxide glass. Stronger surface plasmon resonance absorption from 550 nm to 750 nm was achieved with the MES process than was possible with the one-step process.

show abstract

Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

Pollock

Lad

2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Aluminum-doped zinc oxide (AZO) films were deposited onto amorphous silica substrates using an atomic layer deposition process with diethyl zinc (DEZ), trimethyl aluminum (TMA), and deionized water at 200 °C. Three different Al doping sequences were used at a ZnO:Al ratio of 11:1 within the films. A minimum film resistivity of 1.6 × 10−3 Ω cm was produced using sequential dosing of DEZ, TMA, DEZ, followed by H2O for the Al doping step. This “ZAZW” sequence yielded an AZO film resistivity that is independent of film thickness, crystallographic texture, and grain size, as determined by high resolution x-ray diffraction (XRD). A pseudo-Voigt analysis method yields values for grain sizes that are smaller than those calculated using other XRD methods. Anisotropic grain sizes or variations in crystallographic texture have minimal influence on film resistivity, which suggests that factors other than film texture, such as intragrain scattering, may be important in influencing film resistivity.

show abstract

Atomic layer deposition of aluminum-doped zinc oxide films for the light harvesting enhancement of a nanostructured silicon solar cell

Cited by 3 publications

References 25 publications

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Fabrication of Orderly Copper Particle Arrays on a Multi‐Electrolyte‐Step Anodic Aluminum Oxide Template

Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

Contact Info

Product

Resources

About