Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers

Li, Meng; Dai, Min; Chabal, Yves J.

doi:10.1021/la803581k

Cited by 56 publications

(71 citation statements)

References 40 publications

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“…Growth on the uCN terminated SAM, in contrast, appeared similar to growth on SiO 2 with no organic functionality. 79 In this case, it was shown that the SAM prevented oxidation of the underlying Si, which takes place if no SAM is present. 75 In a mixed layer of these same SAMs, it was found that the morphology of the subsequently deposited TiO 2 depended on the relative surface concentration of uOH versus uCH 3 terminations.…”

Section: Introductionmentioning

confidence: 93%

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Hughes¹,

Engstrom²

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Interactions between radical growth precursors on plasma-deposited silicon thin-film surfacesThe interfaces between inorganic and organic materials are important to a wide variety of technologies. A significant challenge concerns the formation of these interfaces when the inorganic layer must be grown on a pre-existing organic layer. In this review the authors focus on fundamental aspects of inorganic-organic interface formation using transition metal coordination complexes and atomic layer deposition. First, the authors discuss aspects of the synthesis and characterization of ultrathin interfacial organic layers, formed mostly on SiO 2 and possessing a variety of functional groups, including layers with a branched microstructure. The authors go on to discuss the reactions of transition metal coordination complexes with these layers. A number of factors control the uptake of the transition metal complex and the composition of the adsorbed species that are formed. These include the identity, density, and dimensionality or spatial distribution of the functional groups. At room temperature, adsorption on layers that lack functional groups results in the penetration of the organic layer by the transition metal complex and the reaction with residual uOH at the organic/SiO 2 interface. Adsorption on layers with a mostly two-dimensional arrangement of reactive functional groups results in the formation of molecular "bipods," where the surface bound functional groups react with the complex via two ligand exchange reactions. In contrast, for layers that possess a high density of functional groups arranged three dimensionally, the transition metal complex can be virtually stripped of its ligands. Atomic layer deposition on interfacial organic layers also depends strongly on the density and accessibility of reactive functional groups. On surfaces that possess a high density of functional groups, deployed two dimensionally, growth via atomic layer deposition is initially weakly attenuated, mostly uniform and smooth, and eventually evolves to growth characteristic of unmodified SiO 2 . Growth on layers that lack sufficient densities of functional groups is initially strongly attenuated, in contrast, and the resulting films are rough, severely islanded and three dimensional. As a consequence, there is a correlation between the strength of the initial attenuation in the rate of growth and the thin film morphology. Correlations between the initial uptake of the transition metal complex by the organic layer and the initial rate of thin film growth are less direct, however, as the composition and structure of the chemisorbed species must also be considered.

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Section: Introductionmentioning

confidence: 93%

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Hughes¹,

Engstrom²

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…171,172 ALD, a layer-by-layer growth technique, is gentle and selflimiting and does not affect the buried SAM/Si interface. 206 Importantly, the additional Al 2 O 3 layer significantly reduces the leakage current by almost 6 orders of magnitude. 171 The resulting CV behavior is restored, as shown in Figure 12b, with minimal frequency dispersion in the accumulation region.…”

Section: Capacitance−voltage and Conductance−voltage Measurementsmentioning

confidence: 99%

Silicon Surface Modification and Characterization for Emergent Photovoltaic Applications Based on Energy Transfer

et al. 2015

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Figure 2. Cross-sectional SEM images of NW arrays (a) 2 μm and (b) 5 μm in length. Scale bars are 10 μm. (c) Transmission spectra of arrays of 2 μm (green) and 5 μm (black) long nanowires fabricated on 7.5 μm thick silicon. A large intensity reduction is observed through a red-shift in the transmitted light after nanowire fabrication, which indicates enhanced light trapping. Reprinted with permission from ref 53.

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“…[1][2] The reactivity of hydrogen-terminated Si(111) (H-Si(111)) surfaces toward organic nucleophiles, including alkenes, [3][4] alkynes, [5][6] amines, [7][8][9][10][11] thiols and disulfides, [12][13] Grignards, [14][15] and alcohols, [16][17][18][19][20][21][22][23][24][25] has been widely exploited to impart desirable functionality to the Si interface. These surface reactions have been used to control the interface between Si and metals, [26][27][28][29][30][31] metal oxides, [32][33][34][35] polymers, [36][37][38][39][40][41] and redox assemblies.…”

Section: Introductionmentioning

confidence: 99%

A Mechanistic Study of the Oxidative Reaction of Hydrogen-Terminated Si(111) Surfaces with Liquid Methanol

et al. 2017

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H-Si(111) surfaces have been reacted with liquid methanol (CH 3 OH) in the absence or presence of a series of oxidants and/or illumination. Oxidant-activated methoxylation of HSi(111) surfaces was observed in the dark after exposure to CH 3 OH solutions that contained the one-electron oxidants acetylferrocenium, ferrocenium, or 1,1'-dimethylferrocenium. The oxidant-activated reactivity toward CH 3 OH of intrinsic and n-type H-Si(111) surfaces increased upon exposure to ambient light. The results suggest that oxidant-activated methoxylation requires that two conditions be met: (1) the position of the quasi-Fermi levels must energetically favor oxidation of the H-Si(111) surface and (2) the position of the quasi-Fermi levels must energetically favor reduction of an oxidant in solution. Consistently, illuminated n-type HSi(111) surfaces underwent methoxylation under applied external bias more rapidly and at more negative potentials than p-type H-Si(111) surfaces. The results under potentiostatic control indicate that only conditions that favor oxidation of the H-Si(111) surface need be met, with charge balance at the surface maintained by current flow at the back of the electrode. The results are described by a mechanistic framework that analyzes the positions of the quasi-Fermi levels relative to the energy levels relevant for each system.

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Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers

Cited by 56 publications

References 40 publications

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Silicon Surface Modification and Characterization for Emergent Photovoltaic Applications Based on Energy Transfer

A Mechanistic Study of the Oxidative Reaction of Hydrogen-Terminated Si(111) Surfaces with Liquid Methanol

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