Atomic layer deposition of B2O3 thin films at room temperature

Putkonen, Matti; Niinistö, Lauri

doi:10.1016/j.tsf.2006.03.001

Cited by 63 publications

(41 citation statements)

References 43 publications

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“…One can also see from 2 that the as-deposited film is unstable in air. The instability is most likely due to humidity as already discussed in [7]. We could observe almost a linear decrease within the first few minutes after contact to clean room air until a stable remaining coverage is left.…”

Section: Boron Oxidesupporting

confidence: 69%

“…In principle, the surface reaction stops once there are no active reaction sites on the surface and this gives highly conformal growth. Antimony oxide [4,5] and boron oxide [6,7] atomic layer deposition have been reported. The earlier work on boron oxide ALD [7] used boron bromide and water as precursor which can give a corrosive product.…”

mentioning

confidence: 99%

“…Antimony oxide [4,5] and boron oxide [6,7] atomic layer deposition have been reported. The earlier work on boron oxide ALD [7] used boron bromide and water as precursor which can give a corrosive product. In this work, boron oxide were deposited from tris(dimethylamido)borane-ozone, and antimony oxide from triethylantimony-ozone.…”

mentioning

confidence: 99%

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Application of atomic layer deposited dopant sources for ultra‐shallow doping of silicon

Kalkofen

Amusan

Lisker

et al. 2013

Phys. Status Solidi C

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The advanced silicon semiconductor technology requires doping methods for production of ultra‐shallow junctions with sufficiently low sheet resistance. Furthermore, advanced 3‐dimensional topologies may require controlled local doping that cannot be achieved by ionimplantation. Here, the application of the atomic layer deposition (ALD) method for pre‐deposition of dopant sources is presented. Antimony oxide and boron oxide were investigated for such application. Ozone‐based ALD was carried out on silicon wafers by using triethylantimony or tris‐(dimethylamido)borane. Very homogeneous Sb2O5 deposition could be achieved on flat silicon wafers and in trench structures. The thermal stability of antimony oxide layers was investigated by rapid thermal annealing experiments. The layers were not stable above 750 °C. Therefore, this material failed to act as dopant source so far. In contrast, ultra‐shallow boron doping of silicon from ALD grown boron oxide films was successful. However, pure B2O3 films were highly unstable after exposure to ambient air. The boron oxide films could be protected by thin Sb2O5 or Al2O3 films that were in‐situ grown by ALD. Low temperature ALD of Al2O3 at 50 °C from trimethylaluminium (TMA) and ozone was investigated in detail with respect of its protective effect on boron oxide. Interestingly, it was observed that already one ALD cycle of TMA and O3 resulted in significant increase in stability of the boron oxide in air. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Boron Oxidesupporting

confidence: 69%

mentioning

confidence: 99%

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Application of atomic layer deposited dopant sources for ultra‐shallow doping of silicon

Kalkofen

Amusan

Lisker

et al. 2013

Phys. Status Solidi C

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“…Moreover, we should also note that no appreciable peak signaling oxidation of the coating is observed. 31 The achievement of partially crystallization of h-BN can be proven by XRD analysis since the pattern for bulk h-BN is well-known (JCPDS 34-0421) and displays a 100% intensity signal of the (0 0 2) diffraction peak at 26.76 • . Fig.…”

Section: Resultsmentioning

confidence: 99%

New potential for preparation of performing h-BN coatings via polymer pyrolysis in RTA furnace

Yuan

Benayoun

Brioude

et al. 2013

Journal of the European Ceramic Society

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“…8 Experiments were carried out in order to prove saturation coverage for each precursor exposure. Growth investigation ALD type growth could be achieved using the TDMAB precursor with oxygen radicals generated by the remote plasma source.…”

Section: Resultsmentioning

confidence: 99%

Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Kalkofen

Amusan

Bukhari

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant J. Vac. Sci. Technol. A 31, 01A142 (2013); 10.1116/1.4771666Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth J. Vac. Sci. Technol. A 31, 01A106 (2013); 10.1116/1.4756906Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al 2 O 3Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B 2 O 3 films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

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Atomic layer deposition of B2O3 thin films at room temperature

Cited by 63 publications

References 43 publications

Application of atomic layer deposited dopant sources for ultra‐shallow doping of silicon

Application of atomic layer deposited dopant sources for ultra‐shallow doping of silicon

New potential for preparation of performing h-BN coatings via polymer pyrolysis in RTA furnace

Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

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