2024
DOI: 10.1002/pssr.202400202
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Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection

Sophie L. Pain,
Anup Yadav,
David Walker
et al.

Abstract: Hafnium oxide (HfOx) films grown by atomic layer deposition (ALD) have recently been demonstrated to provide high‐quality silicon surface passivation. Reports have suggested that changing the composition of the hafnium‐containing precursor can enable films of both charge polarities to be produced. Herein, the passivation quality of hafnium oxide grown with metal amide precursors and a tetrakis(ethylmethylamido)hafnium (TEMAHf) precursor is examined, considering film charge polarity, chemical‐ and field‐based p… Show more

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