Atomic Layer Deposition of p‐Type Semiconducting Thin Films: a Review

Tripathi, T. S.; Karppinen, Maarit

doi:10.1002/admi.201700300

Cited by 50 publications

(36 citation statements)

References 229 publications

(120 reference statements)

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“…The possible transparent device applications are greatly limited by poor performance of the p-type semiconductors. Hence the execution of p-type semiconductor oxides is important for microelectronics devices [5]. There are a few oxide materials that were used for various device fabrications such as solar cells, thin film transistors, p-n diodes etc [6,7].…”

Section: Introductionmentioning

confidence: 99%

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Salunkhe

Kekuda

2020

Mater. Res. Express

176

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We report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morphological, optical and electrical properties of the sputtered NiO films. Glancing angle x-ray diffraction reveals that the deposited films were polycrystalline in nature with FCC phase. The preferred orientation changes from (200) to (111) in a higher O 2 flow rate environment and an average particle size was estimated using Scherrer relation. The surface morphology of films was studied by using atomic force microscopy. The x-ray photoelectron spectroscopy analysis demonstrates the core level Ni 2p spectra over a range of 850 eV to 885 eV of binding energy and observed Ni 2p 3/2 , Ni 2p 1/2 domains along with their satellite peaks. It infers the presence of both Ni +2 and Ni +3 oxidation states in the sputtered films. Additionally, Raman spectroscopy was carried out to confirm the structural defects level and crystalline nature of the films. The optical results show that deposited films were semi-transparent and the evaluated optical band gap of the material lies in the range 3.36 eV to 3.52 eV. The extracted electrical properties infer either n-type or p-type conductivity depending on the processing conditions of the films.

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Section: Introductionmentioning

confidence: 99%

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Salunkhe

Kekuda

2020

Mater. Res. Express

176

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“…Another drawback of the H 2 S‐based ALD processes is the slowness of these processes, see, e.g., the growth rate values given in Table for the copper sulfide processes. Moreover, majority of the reported copper sulfide processes yields Cu(I) sulfide as the main phase; hence, there is a clear interest in a new robust and efficient ALD process for high‐quality Cu(II) sulfide thin films …”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur

Tripathi

Lahtinen

Karppinen

2018

Adv Materials Inter

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Copper sulfide thin films have been fabricated by various deposition techniques, such as chemical vapor deposition, [15] sputtering, spray pyrolysis, [16,17] chemical bath deposition, [18,19] and electrochemical methods. [20][21][22] However, in most cases the required control over the film stoichiometry and phase composition is poorly achieved due to the coexistence of several stable and metastable copper sulfide phases. [23] Moreover, fabrication of continuous copper sulfide coatings with a well-controlled morphology on highaspect-ratio nanostructures has remained a challenge. It is here in particular where the atomic layer deposition (ALD) technique could provide us with clear advantages over the other thin-film technologies for the deposition of high-quality copper sulfide thin films for various advanced applications including the photovoltaics. [17,24,25] Atomic layer deposition is based on sequential and self-limiting gas-surface reactions and is known to yield exceptionally homogeneous coatings in atomic-scale precision independent of the substrate geometry.The vast majority of the metal sulfide ALD processes is based on metal-organic precursors together with hydrogen sulfide H 2 S as the source of sulfur; [26] the same applies to the reported copper sulfide ALD processes as well (see Table 1). The main merit of H 2 S is that it is highly reactive toward common metal precursors. However, H 2 S is a flammable, corrosive, and highly toxic gas, and its incorporation in the ALD technology presents several serious technical challenges. The special precautions required for the safe use of H 2 S may even be one of the reasons why only 16 metal sulfide ALD processes have been so far reported during the half a century long ALD history. [26] Another drawback of the H 2 S-based ALD processes is the slowness of these processes, see, e.g., the growth rate values given in Table 1 for the copper sulfide processes. Moreover, majority of the reported copper sulfide processes yields Cu(I) sulfide as the main phase; hence, there is a clear interest in a new robust and efficient ALD process for high-quality Cu(II) sulfide thin films. [27] Despite the fact that some of the early ALD processes employed elemental sulfur instead of H 2 S as the sulfur source, [35] to the best of our knowledge no sulfur-based ALD processes have been reported for copper sulfide thin films. Here, we present a simple and efficient low-temperature ALD process for the deposition of high-quality p-type conducting CuS thin films from copper acetyl acetonate and elemental sulfur precursors, as a highly viable solution to the challenges discussed above.A facile, yet precisely controlled and efficient atomic layer deposition (ALD) process is reported for high-quality copper(II) sulfide thin films based on elemental solid sulfur as the source for sulfur; Cu(acac) 2 (acac: acetylacetonate) is used as the copper precursor. In the deposition temperature range as low as 140-160 °C, the process proceeds in an essentially ideal ALD manner and yields single-phase C...

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“…This is because oxygen 2p orbitals are generally at a much lower energy level than that of the metallic atoms in ionic metal oxides, leading to a highly localized and deep valence band that is formed by oxygen 2p orbitals. Holes generated in the oxides would be attracted and localized by oxygen ions, leading to very low hole mobility [8,23]. To tackle the problem of low hole mobility, the highly localized VB or VBM need to be modified to be more dispersed.…”

Section: Delafossite (Cumo 2 )mentioning

confidence: 99%

“…However, the aforementioned materials all belong to n-type TCOs, which show n-type conductivity. The popularity of n-type TCOs arises from their preferable electronic properties [8]. For n-type TCOs, the electrons as charge carriers move in the conduction band minimum (CBM).…”

Section: Introductionmentioning

confidence: 99%

Transparent p-Type Semiconductors: Copper-Based Oxides and Oxychalcogenides

2019

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While p-type transparent conducting materials (TCMs) are crucial for many optoelectronic applications, their performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics, sensors, and transparent electronics. Among the various p-type TCMs proposed so far, Cu-based oxides and oxychalcogenides have demonstrated promising results in terms of their optical and electrical properties. Hence, they are the focus of this current review. Their basic material properties, including their crystal structures, conduction mechanisms, and electronic structures will be covered, as well as their device applications. Also, the development of performance enhancement strategies including doping/co-doping, annealing, and other innovative ways to improve conductivity will be discussed in detail.

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Atomic Layer Deposition of p‐Type Semiconducting Thin Films: a Review

Cited by 50 publications

References 229 publications

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur

Transparent p-Type Semiconductors: Copper-Based Oxides and Oxychalcogenides

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