Atomic layer deposition of ruthenium using an ABC-type process: Role of oxygen exposure during nucleation

Abstract

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Atomic Layer Deposition of Ruthenium Films Using Ruthenium Diketonates and O2, H2, or N2O: The Role of Ruthenium Etching

“…The reported Ru deposition rate for oxidation-based ALD processes (with O 2 , O 3 , H 2 O, or O plasmas) using a variety of Ru metalorganic precursors ranges between about 0.05 , and 2.0 Å/cycle, a wide range that may reflect at least in part the problems with film etching identified in this report. Many intermediate values have been reported, most fluctuating around 0.5 to 1.0 Å/cycle, − ,− and the issue of wide variations in the reported Ru ALD growth rate has been highlighted before as well …”

“…The answer from our work is that surface cleaning is in fact not too sensitive to temperature, at least in terms of the relative rates for carbon versus ruthenium oxidation. The wide range of deposition rates reported in the literature for Ru ALD processes is, in our opinion, a reflection of this limitation. − …”

“…Many metalorganic precursors and process conditions have been explored for the ALD of thin ruthenium films, but no entirely satisfactory answers have been obtained yet. One puzzling aspect of the results published to date on this subject is the wide range of deposition rates measured. − In ALD, the chemical reaction used to grow the thin films is split into two or more complementary and self-limiting reactions to limit the extent of the deposition per ALD cycle to a monolayer or less. Instead, deposition rates as high as 2 Å/cycle have been reported for Ru, and in the low-end rates as low as 0.05 Å/cycle have been measured as well. , In this report, we present results from surface characterization experiments aimed to look at the individual chemistry of the two halves of the ALD cycle, with emphasis on using O 2 as the co-reactant (combined with Ru­(tmhd) 3 as the Ru metalorganic precursor) to better understand the reasons for the poor behavior of Ru ALD.…”

Single-Atom Catalysts Designed and Prepared by the Atomic Layer Deposition Technique

“…We have explained the typical ALD technique by taking as a model an ALD process comprising two precursors, which is referred to as the AB ALD process (Figure ). Even though this binary process is commonly employed, other versions exist such as those based on three different precursors, − ABC processes, , and so on. Moreover, specific reactants can also be added to catalyze the half reactions, which facilitates the ALD process.…”

Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle design

“…Ru films were deposited using a thermal ABC-type ALD process as described in detail elsewhere. 49 The ABC-type cycle is illustrated in Fig. 1(a) and consists of a 15 s ethyl-benzenecyclohexadiene Ru(0) (EBCHDRu) precursor dose ("A"), a 15 s O 2 gas dose ("B"), and a 5 s H 2 gas dose ("C").…”