Atomic layer deposition of SiO2–GeO2 multilayers

Antoja-Lleonart, Jordi; Zhou, Silang; Hond, Kit de; Huang, Shitian; Koster, Gertjan; Rijnders, Guus; Noheda, Beatriz

doi:10.1063/5.0009844

Cited by 13 publications

(7 citation statements)

References 43 publications

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“…GeO 2 nanosheets and films, even one atomic layer GeO 2 structure, have been synthesized in amorphous and crystalline 2D forms for many years. [297][298][299][300][301][302][303][304][305][306][307] However, GeO 2 materials do not include any vdW layered bulk materials; this is different from the common situation in which the 2D structures are usually simple monolayers of the bulk.…”

Section: Germanium Dichalcogenidesmentioning

confidence: 99%

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Zhao

Feng

2022

InfoMat

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Two-dimensional (2D) materials based on group IVA elements have attracted extensive attention owing to their rich chemical structures and novel properties. This comprehensive review focuses on the phases of Ge monoelemental and binary 2D materials including germanene and its derivatives, Ge-IVA binary compounds, Ge-VA binary compounds, and Ge-VIA binary compounds.The latest progress in predictive modeling, fabrication, and fundamental and physical property modulation of their stable 2D configurations are presented.Accordingly, various interesting applications of these Ge-based 2D materials are discussed, particularly field effect transistors, photodetectors, optical devices, catalysts, energy storage devices, solar cells, thermoelectric devices, sensors, biomedical materials, and spintronic devices. Finally, this review concludes with a few perspectives and an outlook for quickly expanding the application scope Ge-based 2D materials based on recent developments.

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Section: Germanium Dichalcogenidesmentioning

confidence: 99%

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Zhao

Feng

2022

InfoMat

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“…Recently, using an evaporative-recirculation method, Balitsky et al 28 have succeeded to grow 4-12 mm thick quartz-like GeO 2 crystals on SiO 2 quartz substrates. Also recently, other works report insights into the crystallization mechanism of GeO 2 films 29 , as well as the possibility to obtain improved GeO 2 /SiO 2 miscibility by means of Atomic Layer Deposition multilayers 30 . To the best of our knowledge, crystalline thin films of the Si x Ge 1−x O 2 solid solution have not been reported.…”

Section: Introductionmentioning

confidence: 99%

Thin films of the alpha-quartz SixGe1-xO2 solid-solution

Zhou¹,

Antoja-Lleonart²,

Ocelík³

et al. 2021

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SiO 2 with the α-quartz structure is one of the most popular piezoelectrics. It is widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, and so on. GeO 2 can also be crystallized into the α-quartz structure and it has better piezoelectric properties, with higher piezoelectric coefficient and electromechanical coupling coefficients, than SiO 2 . Experiments on bulk crystals and theoretical studies have shown that these properties can be tuned by varying the Si/Ge ratio in the Si x Ge 1−x O 2 solid solution. However, to the best of our knowledge, thin films of Si x Ge 1−x O 2 quartz have never been reported. Here we present the successful crystallization of Si x Ge 1−x O 2 thin films in the α-quartz phase on quartz substrates (SiO 2 ) with x up to 0.75. Generally, the films grow semi-epitaxially, with the same orientation as the substrates. Interestingly, the Si 0.75 Ge 0.25 O 2 composition grows fully strained by the quartz substrates and this leads to the formation of circular quartz domains with an ordered Dauphiné twin structure. These studies represent a first step towards the optimization of piezoelectric quartz thin films for high frequency (> 5 GHz) applications.

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“…Accordingly, it is necessary to seek a new ALD process with the ability to encapsulate the perovskite NCs without damaging the optical performance of the NCs. Recently, silica has been widely investigated and it is an ideal material to stabilize perovskite NCs against the external environment due to its excellent light transmission performance in the entire visible region and water corrosion resistance properties. , However, the thermal SiO 2 ALD process usually requires high temperatures (>300 °C), , which would induce PL quenching and agglomeration of the perovskite NCs . Therefore, it is important to develop a mild SiO 2 ALD method to encapsulate and stabilize the perovskite NCs.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Encapsulation of Perovskite Nanocrystal Luminescent Films via Plasma-Enhanced SiO₂ Atomic Layer Deposition

Jing

Merkx

Cai

et al. 2020

ACS Appl. Mater. Interfaces

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Photoluminescence perovskite nanocrystals (NCs) have shown significant potential in optoelectronic applications in view of their narrow band emission with high photoluminescence quantum yields and color tunability. The main obstacle for practical applications is to obtain high durability against an external environment. In this work, a low temperature (50 °C) plasma-enhanced atomic layer deposition (PE-ALD) protection strategy was developed to stabilize CsPbBr 3 NCs. Silica was employed as the encapsulation layer because of its excellent light transmission performance and water corrosion resistance. The growth mechanism of inorganic SiO 2 via PE-ALD was investigated in detail. The Si precursor bis(diethylamino)silane (BDEAS) reacted with the hydroxyl groups (−OH) and thereby initiated the subsequent silica growth while having minimal influence to the organic ligands and did not cause PL quenching. Subsequently, O 2 plasma with high reactivity was used to oxidize the amine ligands of the BDEAS precursor while did not etch the NCs. The obtained CsPbBr 3 NCs/SiO 2 film exhibited exceptional stability in water, light, and heat as compared to the pristine NC film. Based on this method, a white lightemitting diode with improved operational stability was successfully fabricated, which exhibited a wide color gamut (∼126% of the National Television Standard Committee). Our work successfully demonstrates an efficient protection scheme via the PE-ALD method, which extends the applied range of other materials for stabilization of perovskite NCs through this approach.

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Atomic layer deposition of SiO2–GeO2 multilayers

Cited by 13 publications

References 43 publications

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Thin films of the alpha-quartz SixGe1-xO2 solid-solution

Nanoscale Encapsulation of Perovskite Nanocrystal Luminescent Films via Plasma-Enhanced SiO₂ Atomic Layer Deposition

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Atomic layer deposition of SiO2–GeO2 multilayers

Cited by 13 publications

References 43 publications

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

Thin films of the alpha-quartz SixGe1-xO2 solid-solution

Nanoscale Encapsulation of Perovskite Nanocrystal Luminescent Films via Plasma-Enhanced SiO2 Atomic Layer Deposition

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Nanoscale Encapsulation of Perovskite Nanocrystal Luminescent Films via Plasma-Enhanced SiO₂ Atomic Layer Deposition