Atomic-Layer-Deposition of SiO2 with Tris(Dimethylamino)Silane (TDMAS) and Ozone Investigated by Infrared Absorption Spectroscopy

Abstract

We have studied SiO 2 ALD processes with precursors of tris(dimethylamino)silane (TDMAS) and ozone on Si(100) surfaces at room temperature by infrared absorption spectroscopy with a multiple internal reflection geometry. It was found that TDMAS dissociatively adsorbs on OH sites of hydroxyrated Si surfaces and ozone irradiation is effective to remove the hydroaminocarbon adsorbates introduced in the course of the TDMAS adsorption. Compensation of OH sites by a water vapor treatment after the ozone process is effective to sustain the cyclic SiO 2 deposition.

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

“…These precursors have amine ligands which are more reactive toward −OH surface groups compared to chloride- and hydride ligands . The high reactivity of the amine ligands in combination with the use of highly reactive co-reactants such as H 2 O 2 , O 3 , and O 2 plasma has allowed SiO 2 deposition at temperatures lower than 300 °C and, in the specific case of O 2 plasma, even at room temperature. ,− In addition, aminosilanes are desirable from a safety and operability perspective as they do not lead to the desorption of corrosive reaction byproducts.…”

Surface Modification of Nanoporous Anodic Alumina during Self-Catalytic Atomic Layer Deposition of Silicon Dioxide from (3-Aminopropyl)Triethoxysilane

“…On the other hand, silicon dioxide is a material of particular interest for membrane modification due to its dielectric nature, high chemical and thermal stability. In this context, silica-alumina composite membranes synthesized through chemical vapor deposition (CVD) of tetraethylorthosilicate (TEOS) and aluminium tri-sec-butoxide precursor have been proposed for application in membrane reactors due to their high gas permeation and selectivity [ 15 ] The ALD deposition of conformal SiO 2 films from a wide variety of silane precursors, including tetraethoxysilane, tris[dimethylamino]silane, bis[diethylamino]silane, ( N,N -dimethylamino)trimethylsilane, vinyltrimethoxysilane, trivinylmethoxysilane, tetrakis(dimethylamino)silane, tris(dimethylamino)silane, tetrakis(ethylamino)silane, aminodisilane and 3-aminopropyltriethoxysilane (APTES) has been explored in the literature, [ 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. This work focuses on the thermal ALD deposition process based on the self-catalytic reaction between 3-aminopropyltriethoxysilane, water, and ozone as precursors.…”

Review—Atomic Layer Deposition of Silicon Dioxide Thin Films

“…Aminosilanes: TDMAS precursor, SiH[N(CH 3 ) 2 ] 3 .-TDMAS (in some reports-3DMAS) precursor was studied more frequently than other aminosilanes. 33,[38][39][40][41][42][43][44][45][46][48][49][50][51][52][53] The data summarized for TDMAS films are shown in Table X.…”

“…In a series of reports, [40][41][42][43] SiO 2 deposition was carried out in an ultrahigh-vacuum chamber on p-type (100) silicon prisms with dimensions of 0.5 × 10 × 40 mm with short sides cut at an angle of 45 degrees. This type of sample was required for examination using an infrared spectroscopy technique, called multiple internal reflection infrared absorption spectroscopy (MIR-IRAS).…”