Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors

Adelmann, Christoph; Delabie, Annelies; Schepers, Bart; Rodriguez, Leonard; Franquet, Alexis; Conard, Thierry; Opsomer, Karl; Vaesen, I.; Moussa, Alain; Pourtois, Geoffrey; Pierloot, Kristine; Caymax, Matty; Elshocht, Sven Van

doi:10.1002/cvde.201106967

Cited by 18 publications

(32 citation statements)

References 64 publications

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“…At a glance, SiO 2 , with its band gap of ∼9 eV, enhances the band gap of the resulting (Ta 2 O 5 ) 1– x (SiO 2 ) x composite dielectric as a function of incorporation, thereby allowing for higher energy band discontinuities and increased carrier confinement. 15,16,36 Figure 11c illustrates the resulting band alignment of the TaSiO x /(110)In x Ga 1– x As heterointerface in accordance with the values summarized in Table 1.…”

Section: Resultssupporting

confidence: 70%

In Situ SiO₂ Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO_x Atomic Layer Deposition Process

et al. 2018

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In this work, an in situ SiO 2 passivation technique using atomic layer deposition (ALD) during the growth of gate dielectric TaSiO x on solid-source molecular beam epitaxy grown (100)In x Ga 1– x As and (110)In x Ga 1– x As on InP substrates is reported. X-ray reciprocal space mapping demonstrated quasi-lattice matched In x Ga 1– x As epitaxy on crystallographically oriented InP substrates. Cross-sectional transmission electron microscopy revealed sharp heterointerfaces between ALD TaSiO x and (100) and (110)In x Ga 1– x As epilayers, wherein the presence of a consistent growth of an ∼0.8 nm intentionally formed SiO 2 interfacial passivating layer (IPL) is also observed on each of (100) and (110)In x Ga 1– x As. X-ray photoelectron spectroscopy (XPS) revealed the incorporation of SiO 2 in the composite TaSiO x , and valence band offset (Δ E V ) values for TaSiO x relative to (100) and (110)In x Ga 1– x As orientations of 2.52 ± 0.05 and 2.65 ± 0.05 eV, respectively, were extracted. The conduction band offset (Δ E C ) was calculated to be 1.3 ± 0.1 eV for (100)In x Ga 1– x As and 1.43 ± 0.1 eV for (110)In x Ga 1– x As, using TaSiO x band gap values of 4.60 and 4.82 eV, respectively, determined from the fitted O 1s XPS loss spectra, and the literature-reported composition-dependent In x Ga 1– x As band gap. The in situ passivation of In x Ga 1– x As using SiO 2 IPL during ALD of TaSiO x and the relatively large Δ E V and Δ E C values reported in this work are expected to aid in the future development of thermodynamically stable high-κ gate dielectrics on In x Ga 1– x As with reduced gate leakage, particularly under low-power device operation.

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Section: Resultssupporting

confidence: 70%

In Situ SiO₂ Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO_x Atomic Layer Deposition Process

et al. 2018

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“…The HCl by‐product also corrodes reactors. In the ALD of Ta 2 O 5 and Nb 2 O 5 thin films the failure of the metal chloride precursors beyond a certain temperature threshold was reportedly due to the formation of volatile MOCl 3 , as can be seen in Reaction 1.

{normalM}_{2} {normalO}_{5} + MC {normall}_{5} (g) \to 5 MOC {normall}_{3} (g) (M = Nb, Ta)

…”

Section: Ald Of Groups 4 and 5 Oxide Thin Filmsmentioning

confidence: 98%

“…The growth reaction should not produce reactive by‐products. In the most severe cases reactive by‐products can etch the film material and thereby provoke non‐uniformity and low GPC . Moreover, reactive by‐products may readsorb on the surface and occupy reactive sites leading to surface passivation…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Blanquart

Niinistö

Ritala

et al. 2014

Chemical Vapor Deposition

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The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated for its unique advantages such as excellent repeatability, conformity, and thickness control at the atomic level. ALD precursor chemistry has mainly been based on homoleptic compounds such as, but not limited to, metal halides, alkylamides, and alkoxides, however these precursors have drawbacks such as possible halide contamination and low thermal stabilities in the case of the alkylamides and alkoxides. Consequently, heteroleptic precursors have been investigated as alternatives to the existing homoleptic counterparts, leading to the development of several advantageous processes. Nevertheless, there is no thematic review dedicated to the heteroleptic precursors and their properties, and it seems that no coherent strategy has been adopted for the development of heteroleptic precursors. This review gives a brief description of ALD and presents studies on the deposition of thin films of groups 4 and 5 metal oxides using ALD. A description of the general ALD properties of homoleptic precursors, in addition to a review on the thermal ALD of groups 4 and 5 metal oxides from heteroleptic precursors, is provided. Trends in the properties of heteroleptic ALD precursors, based on the literature review and recent experimental data, are discussed.

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“…A Ta 2 O 5 layer is deposited by atomic layer deposition (ALD) with TaCl 5 as precursor in combination with H 2 O as the oxidant. Details about the entire deposition can be found in literature [45]. The thin film is grown on a 300 mm p-type Si (1 0 0) substrate, after a standard (IMEC-clean) process which leads to the formation of ≈1.1 nm of chemical SiO 2 layer.…”

Section: Peak Force Tuna Case Studiesmentioning

confidence: 99%

Nanoscaled Electrical Characterization

Celano

2016

Metrology and Physical Mechanisms in New Generation Ionic Devices

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Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors

Cited by 18 publications

References 64 publications

In Situ SiO₂ Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO_x Atomic Layer Deposition Process

In Situ SiO₂ Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO_x Atomic Layer Deposition Process

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Nanoscaled Electrical Characterization

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Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors

Cited by 18 publications

References 64 publications

In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process

In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Nanoscaled Electrical Characterization

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Product

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In Situ SiO₂ Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO_x Atomic Layer Deposition Process

In Situ SiO₂ Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO_x Atomic Layer Deposition Process