Atomic layer deposition of $$\text {HfO}_2$$ HfO2 for integration into three-dimensional metal–insulator–metal devices

Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia

“…Due to its band gap of 5.7 eV, the insulating HfO 2 has previously been assumed as challenging to be formed or switched [ 20 ]. The voltage range reported here is lower than those used for Hf memristors with different oxide origins [ 23 , 34 , 35 ]. The reason for this could be related to the bonding between Hf and P (incorporated from PB electrolyte) which was previously confirmed by XPS measurements in Figure 2 .…”

“…Anodic formation of Hf oxide directly on Hf parent metal thin films already showed admirable electrical properties for electronic applications [ 21 , 22 ]. Therefore, the use of inexpensive, simple, and fast electrochemical methods for fabrication of the oxide layer necessary in MIM structures such as Pt/HfO 2 /Hf may present some advantages for being used in ReRAMs competing with more expensive fabrication methods such as sputtering [ 18 , 23 , 24 ]. The aim of this work is to assess the stability, reproducibility, and feasibility of anodic memristors on Hf.…”

Preventing Corrosion of Aluminum Metal with Nanometer-Thick Films of Al2O3 Capped with TiO2 for Ultraviolet Plasmonics

“…The reaction chamber was maintained at 150 °C. The deposition conditions have been set according to previous work. − Al 2 O 3 was grown from trimethylaluminum (TMA from Strem Chemicals, 98%) and deionized water (ρ = 18.2 MΩ·cm) that were stored in dedicated canisters at room temperature (RT). The ALD cycle consisted of sequential pulse and purge of TMA and H 2 O, alternatively.…”