2020
DOI: 10.1116/6.0000166
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Atomic layer deposition of thermoelectric layered cobalt oxides

Abstract: Paper published as part of the special topic on Atomic Layer Deposition (ALD) Note: This paper is part of the 2021 Special Topic Collection on Atomic Layer Deposition (ALD). ARTICLES YOU MAY BE INTERESTED INAtomic layer deposition of a uniform thin film on two-dimensional transition metal dichalcogenides

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Cited by 5 publications
(3 citation statements)
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“…Other thermoelectric materials are available to be deposit by ALD, the majority being the more traditional tellurium and bismuth compounds 117,118 in combination with antimony 119 and lead 120 while more novel materials started to be investigated recently e.g. cobalt oxides 121 . The ZnO chosen for this research has the advantage of the ease of deposition, ample research interest and ease of inorganic-organic integration to deposit the ZnO-HQ hybrid films…”
Section: Thermoelectric Ald/mld Zno-based Coatingsmentioning
confidence: 99%
“…Other thermoelectric materials are available to be deposit by ALD, the majority being the more traditional tellurium and bismuth compounds 117,118 in combination with antimony 119 and lead 120 while more novel materials started to be investigated recently e.g. cobalt oxides 121 . The ZnO chosen for this research has the advantage of the ease of deposition, ample research interest and ease of inorganic-organic integration to deposit the ZnO-HQ hybrid films…”
Section: Thermoelectric Ald/mld Zno-based Coatingsmentioning
confidence: 99%
“…In this work, we approach this problem for the example of PtCoO 2 as for both Pt/PtO x and CoO x well-established ALD processes exist. [28,29,[47][48][49][50][51] We first investigate the ALD of PtCoO 2 thoroughly using Me 3 Pt(CpMe), Co-bis(N-t-butyl-N′ethylpropanimidamidate) (Co-AMD), and O 2 plasma, which is generated by a remote inductively-coupled-plasma (ICP) source. We have chosen these precursors because we used them in earlier work for the deposition of Pt, CoO x, and Co-P. [52] Next, we explore the formation of the delafossite phase by annealing in different atmospheres and analyze the crystal structure.…”
Section: Introductionmentioning
confidence: 99%
“…Atomic layer deposition (ALD) has been successfully implemented for the growth of a large number of ternary oxides. [27][28][29][30][31][32][33][34][35][36][37][38][39][40] For example, a review by Mackus et al [41] from 2019 provides an extensive overview of ALD processes for ternary and higher oxides, as well as doped oxides. Interestingly, the authors list only one ALD process for such an oxide that contains a…”
mentioning
confidence: 99%