Atomic Layer Deposition of Titanium Disulfide Thin Films

Abstract

Titanium disulfide thin films are grown by atomic layer deposition (ALD) at 400-500°C using TiCl 4 and H 2 S as precursors. Soda-lime glass, silicon, and thin films of TiN, ZnS, Rh, Ir, Pd, Pt, and Ru are used as substrates. Hexagonal (001)-oriented TiS 2 is deposited on ZnS at 400°C with growth rates of between 0.15 and 0.20 Å per cycle. Randomly oriented, hexagonal, platelike crystals are deposited on glass and TiN with a growth rate of 0.26 Å per cycle. Significant variations in surface morphologies were detected in TiS 2 films on various noble metals. TiS 2 was also grown on the pore walls of an alumina membrane.

Titanium Disulfide Coated Carbon Nanotube Hybrid Electrodes Enable High Energy Density Symmetric Pseudocapacitors

“…Conformal coating of TiS 2 onto highly conductive 3D porous networks such as vertically aligned carbon nanotubes (VACNTs) improves electrical conductivity, increases surface areas, and helps the mechanical stability in electrochemical reactions . Potential methods include chemical vapor deposition (CVD), electro‐ and electroless plating, and atomic layer deposition (ALD) . Both CVD‐ and plating‐based processes encounter challenges in uniform coverage and crystallinity while the ALD deposition can achieve uniform and conformal coverage on porous, high‐aspect‐ratio structures such as VACNTs .…”

“…Both CVD‐ and plating‐based processes encounter challenges in uniform coverage and crystallinity while the ALD deposition can achieve uniform and conformal coverage on porous, high‐aspect‐ratio structures such as VACNTs . Not only does conventional ALD of TiS 2 use TiCl 4 and highly toxic H 2 S as precursors, the subsequent production of sulfur contaminates ALD chambers . In contrast, here we developed a two‐step process that combines ALD of TiN with a following CVD sulfurization to fabricate TiS 2 composite‐coated VACNT electrodes with desired nanostructures.…”

Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening

“…In general, high temperature and a highly reducing environment are needed to substitute S for O and form TiS 2 . [10][11][12] In addition to problems with integration, high temperature can lead to film breakup through coarsening, resulting in rough and noncontinuous films. Here we find that the process temperature for TiS 2 film formation can be systematically reduced by lowering the level of trace oxygen during the sulfurization process.…”

Gallium Sulfide–Single‐Walled Carbon Nanotube Composites: High‐Performance Anodes for Lithium‐Ion Batteries

“…As a result, ALD films are exquisitely conformal and uniform, even on high surface area or high aspect ratio substrates, and the film thickness and composition can be controlled at the atomic level. A broad range of materials can be synthesized by ALD, and to date, these include over different metal sulfides reported, including ZnS, CdS, CaS, BaS, SrS, Cu 2 S, In 2 S 3 , WS 2 , TiS 2 , PbS, SnS, ZnIn x S y , and Cu 2 ZnSnS 4 …”