Atomic layer deposition of VO2 films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

Atomic layer deposition of vanadium oxides: process and application review

“…A systematic coarsening of vanadium oxide was reported on fused silica substrates upon annealing in pure N 2 , [78]. When very similar films were annealed by Lv et al in inert ambient (pure Ar in their case), film cracking was observed, but no agglomeration was seen, indicating a better adhesion to the Si surface compared to the fused silica, [80]. The interplay between the presence of oxygen in the ambient and the nature of the substrate is not yet completely understood, and requires further research.…”

“…Lv et al, [80], implemented the reaction of TDMAV with H 2 O in thermal ALD. The precursor was evaporated at 60 • C and carried into the reactor using Ar flow.…”

“…Similarly, Lv et al found that annealing-induced crystallization of a TDMAV+H 2 O-grown film features a long nucleation time at 450 • C in Ar ambient, as shown in Figure 9 . Nanocrystalline films were formed after 30-min of annealing, whereas fully crystallised films are obtained after 100 minutes, [80]. In general, it can be stated that raising the temperature induces crystallisation and can raise the oxidation state, provided sufficient partial pressure of oxygen is available.…”

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

“…[15][16][17][18][19][20] Using this precursor, the window of the deposition temperatures for VO2 has been reported to be between 125 and 175 o C. 15 The VO2 thin films were successfully deposited by ALD on various substrates, such as glass, SiO2, Al2O3 and GaN. 17,[21][22][23] The asdeposited ALD films are amorphous due to the low deposition temperature used, without a MIT, thus a post-deposition annealing is required. Many groups have reported the optimizations of the annealing conditions (temperature, time, ambient) and have shown that the annealing conditions are very important to achieve the desired VO2 phase.…”

“…Many groups have reported the optimizations of the annealing conditions (temperature, time, ambient) and have shown that the annealing conditions are very important to achieve the desired VO2 phase. 16,17,21 The This is the author's peer reviewed, accepted manuscript. However, the online version of record will be different from this version once it has been copyedited and typeset.…”