Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor

Park, In Sung; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho; Kang, Jingoo; Noh, Wontae; Lansalot-Matras, Clément

doi:10.1039/c4tc01405g

Cited by 56 publications

(38 citation statements)

References 40 publications

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“…ALD has been used to fabricate highly conformal coatings of various metal oxide films, such as SiO 2 , Y 2 O 3 , and HfO 2 , with thicknesses of the order of several to a hundred nanometers on complex three-dimensional capacitor structures with a high aspect ratio [14,15,16]. In the ALD process of a binary metal oxide, the film grows through the surface reaction of a metal precursor and oxidant that are alternately supplied to and purged from the underlying substrate.…”

Section: Introductionmentioning

confidence: 99%

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Chung

Kim

et al. 2018

Materials

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The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.

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Section: Introductionmentioning

confidence: 99%

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Chung

Kim

et al. 2018

Materials

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“…Several techniques have been used to grow Y 2 O 3 as thin films 9 on a variety of substrates including Pulsed Laser Deposition (PLD) 24 , Physical Vapour Deposition (PVD) 25 , Atomic Layer Deposition (ALD) 8,26,27,28 , Metalorganic Chemical Vapour Deposition (MOCVD) 29 or Molecular Beam Epitaxy (MBE). 30,31 Among those, ALD possesses many assets for depositing thin films with an accurate thickness control, the possibility to vary the doping level as well as a good uniformity on standard silicon wafers or on any technologically relevant material platform.…”

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confidence: 99%

Ultrathin Eu- and Er-Doped Y₂O₃ Films with Optimized Optical Properties for Quantum Technologies

et al. 2019

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Atomic Layer Deposited (ALD) Y 2 O 3 thin films have been thoroughly investigated for optical or electronic applications. The coherent spectroscopy of lanthanide ions doped into this material has also recently attracted an increasing interest in the field of quantum technologies for which they are considered promising candidates in quantum memories or as spin-photon interface. However, these most demanding applications require a deep control over the local positioning of the ions and their close environment in the crystalline matrix. This study focuses on the structural as well as optical properties of Eu 3+ and Er 3+ dopants in Y 2 O 3 using photoluminescence (PL), luminescence decay times and inhomogeneous linewidth (Γ inh) measurements within this particular context. While as-grown ALD films do not provide an ideal host for the emitters we demonstrate that by optimizing the deposition conditions and using appropriate annealing post treatments, narrow inhomogeneous lines can be obtained for the 7 F 0 ↔ 5 D 0 transition of Eu 3+ even for nanoscale films. Furthermore, about 1.5 ms lifetime has been measured for the infrared telecom transition of Er in ultrathin films (< 10 nm) which is an order of magnitude higher than in nanoparticles of the same size. These results validate optimized rare-earth doped ALD Y 2 O 3 films as a suitable platform for photonics applications where few nm thick films with well localized emitters are mandatory. This approach provides the first building blocks towards the development of more complex devices for quantum sensing or hybrid structures coupled to other systems such as 2D materials. Rare earth (RE) oxides represent a technologically useful class of materials that can address a variety of applications such as photonics 1,2,3 , protective coatings 4,5 , laser media, catalysts 6

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“…[127] Er-doped GaAs showed resistance switching between the low and high resistance states with voltage sweeping, and the resistance ratio between the two states was more than 1000 times, which is preferable for non-volatile memory operation. [132] The new precursor has also been used to produce to produce Y-doped HfO 2 films with various Y/(Y+Hf) compositions ranging from ca. 0.6 mol% to ca.…”

Section: Other Organolanthanide-catalyzed Reactionsmentioning

confidence: 99%

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2014

Edelmann

2016

Coordination Chemistry Reviews

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Atomic layer deposition of Y₂O₃ films using heteroleptic liquid (iPrCp)₂Y(iPr-amd) precursor

Abstract: The Y2O3 films grown with a new and heteroleptic liquid Y precursor, (iPrCp)2Y(iPr-amd), have been investigated with chemical properties of precursor, atomic layer deposition process, and material characterization of the deposited film and its non-volatile resistive switching behaviour.

Cited by 56 publications

References 40 publications

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Ultrathin Eu- and Er-Doped Y₂O₃ Films with Optimized Optical Properties for Quantum Technologies

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2014

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Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor

Abstract: The Y2O3 films grown with a new and heteroleptic liquid Y precursor, (iPrCp)2Y(iPr-amd), have been investigated with chemical properties of precursor, atomic layer deposition process, and material characterization of the deposited film and its non-volatile resistive switching behaviour.

Cited by 56 publications

References 40 publications

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Ultrathin Eu- and Er-Doped Y2O3 Films with Optimized Optical Properties for Quantum Technologies

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2014

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Product

Resources

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Atomic layer deposition of Y₂O₃ films using heteroleptic liquid (iPrCp)₂Y(iPr-amd) precursor

Ultrathin Eu- and Er-Doped Y₂O₃ Films with Optimized Optical Properties for Quantum Technologies