2018
DOI: 10.1021/acs.jpcc.7b11469
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Atomic Layer Deposition of Zinc Oxide: Study on the Water Pulse Reactions from First-Principles

Abstract: Atomic layer deposition (ALD) of zinc oxide thin films has been under intense research in the past few years. The most common precursors used in this process are diethyl zinc (DEZ) and water. The surface chemistry related to the growth of a zinc oxide thin film via atomic layer deposition is not entirely clear, and the ideal model of the process has been contradicted by experimental data, e.g., the incomplete elimination of the ethyl ligands from the surface and the non-negative mass change during the water pu… Show more

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Cited by 28 publications
(51 citation statements)
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“…ZnO growth on either InGaAs or ZnO surface is very different . ZnO ALD on ZnO has been the subject of experimental works and more recently of density functional theory and Monte Carlo simulations . In addition, ZnO surface reactivity, which depends on surface polarity and reconstruction, has been studied .…”
Section: Discussionmentioning
confidence: 99%
“…ZnO growth on either InGaAs or ZnO surface is very different . ZnO ALD on ZnO has been the subject of experimental works and more recently of density functional theory and Monte Carlo simulations . In addition, ZnO surface reactivity, which depends on surface polarity and reconstruction, has been studied .…”
Section: Discussionmentioning
confidence: 99%
“…[ 33 ] The ZnO deposition and subsequent growth (36 and 67 nm in thickness) assisted by such a buffer layer, were fulfilled on a 58 µm thick BOPP film with excellent uniformity. [ 34 ]…”
Section: Generic Ald Application In Pp Film Engineeringmentioning
confidence: 99%
“…[ 36b,38 ] Regardless of the substrate, the ALD reactions using DEZ and water can be mostly summarized as (CH 3 CH 2 ) 2 Zn + 2H 2 O → ZnO + 2C 2 H 6 . [ 34 ]…”
Section: Generic Ald Application In Pp Film Engineeringmentioning
confidence: 99%
“…The activation energy for removing the ligand from a monoethylzinc surface fragment is significantly higher. In DFT calculations on surface reactions during the subsequent water pulse, 11 the ligands were found to be non-reactive towards ligand elimination with water molecules. Only a weak ligandcoverage dependency on the reaction barriers was observed.…”
Section: )mentioning
confidence: 99%
“…In the DFT calculations, 11 water was found to adsorb mainly to 2-or 3-coordinated zinc atoms and to monoethylzinc groups coordinated with two oxygens. Thus, water adsorption is defined in kMC to occur for zinc sites with cn 2 and 3 and ZnX sites with cn 3 (cn = 2 for oxygens and 1 for ligand).…”
Section: Adsorption Of Watermentioning
confidence: 99%