Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se2 thin-film solar cells

Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se2 interface

“…4,8,9 At ͑post-͒deposition annealing temperatures necessary for high device efficiencies ͑200-250°C͒, a pronounced diffusion of Cu and Na from the CIGSe/Mo/glass substrate into the nominal In 2 S 3 buffer layer was found in these studies. However, a complete picture of the chemical interface structure is still missing.…”

“…͓͔ Cu͑In, Ga͒Se 2 ͑CIGSe͒ thin-film solar cells with an n + -ZnO/i-ZnO/CdS/CIGSe/Mo/glass device structure have reached efficiencies of 20%. 1 To replace the CdS layer by a nontoxic, more transparent buffer, and the conventionally used chemical bath deposition by a technique allowing inline processing, In 2 S 3 layers have been deposited by physical vapor deposition, 2 sputtering, 3 atomic layer deposition, 4 and spray ion layer gas reaction. 5 The In 2 S 3 /CIGSe interface has been previously investigated by different destructive depth-profiling techniques, 2,6 high-resolution transmission electron microscopy and energy dispersive x-ray analysis, 7 and x-ray photoelectron spectroscopy ͑XPS͒.…”

“…5 The In 2 S 3 /CIGSe interface has been previously investigated by different destructive depth-profiling techniques, 2,6 high-resolution transmission electron microscopy and energy dispersive x-ray analysis, 7 and x-ray photoelectron spectroscopy ͑XPS͒. 4,8,9 At ͑post-͒deposition annealing temperatures necessary for high device efficiencies ͑200-250°C͒, a pronounced diffusion of Cu and Na from the CIGSe/Mo/glass substrate into the nominal In 2 S 3 buffer layer was found in these studies. However, a complete picture of the chemical interface structure is still missing.…”

(Sn,Al)Ox Films Grown by Atomic Layer Deposition

“…[26][27][28][29] Therefore, in-depth understanding of chemisorption of precursors on heterogeneous surfaces is necessary to control the composition and the electrical, optical, magnetic, and mechanical properties of the resulting films. [29][30][31][32][33][34] One process for ALD of SnO 2 at low temperature has been reported, but the films were amorphous as deposited, and needed a high-temperature anneal to obtain crystalline material with significant mobility. 35 A recently reported ALD process overcomes this difficulty by using a more reactive tin source that deposits well-crystallized 36 The areal density of oxygen for an ultraviolet-ozone treated carbon substrate was measured to be ~2×10 14 atoms/cm 2 , which does not affect the oxygen signal which comes from a grown oxide film.…”

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

“…These include layers of CBD-ZnS, 36 MOCVD-ZnSe, 37 ALD-ZnSe, 38 CBD-ZnSe, 39 PVD-ZnIn 2 Se 4 , 40 co-sputtered Zn 1 À x Mg x O 41 and ALDIn 2 S 3 . 42,43 All of these Cd-free buffer layers have demonstrated efficiencies well above 11% with a record efficiency 36 for CBD-ZnS of 18Á1%. However, Zn-based compounds tend to form a blocking barrier due to the band alignment with CIGS.…”