Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

Kukli, Kaupo; Kemell, Marianna; Köykkä, Joel; Mizohata, Kenichiro; Vehkamäki, Marko; Leskelä, Markku

doi:10.1016/j.tsf.2015.06.033

Cited by 24 publications

(26 citation statements)

References 39 publications

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“…ALD of ZrO 2 from ZrCl 4 and O 3 has been studied [ 14 ]. Reactions between Fe(acac) 3 adsorbing on zirconia surfaces [ 15 – 16 ] has been studied as well.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

Kalam¹,

Seemen²,

Ritslaid³

et al. 2018

Beilstein J. Nanotechnol.

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Thin solid films consisting of ZrO 2 and Fe 2 O 3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO 2 were stabilized by Fe 2 O 3 doping. The number of alternating ZrO 2 and Fe 2 O 3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0. 119

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“…ALD of ZrO 2 from ZrCl 4 and O 3 has been studied [ 14 ]. Reactions between Fe(acac) 3 adsorbing on zirconia surfaces [ 15 – 16 ] has been studied as well.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

Kalam¹,

Seemen²,

Ritslaid³

et al. 2018

Beilstein J. Nanotechnol.

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“…3) • , respectively, could be attributed to the monoclinic ZrO 2 phase (PDF card 00-037-1484). In an earlier study, 46 the formation of both cubic and monoclinic ZrO 2 phases in the thin films deposited at the same temperature and from the same precursors has been described. • (PDF card 00-042-1467).…”

Section: Resultsmentioning

confidence: 99%

“…25,26 Co 3 O 4 and ZrO 2 oxides may be grown using different physical and chemical techniques, such as solution spray pyrolysis, [27][28][29] chemical vapor deposition, [30][31][32][33] pulsed laser deposition, 34,35 solgel, 36,37 electron-beam evaporation, 38,39 or, atomic layer deposition (ALD). [40][41][42][43][44][45][46] Herewith, ALD may be regarded as the ultimate method providing the most precise thickness control over large substrate areas.…”

mentioning

confidence: 99%

Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides

Seemen

Rähn

Kalam

et al. 2018

ECS J. Solid State Sci. Technol.

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Five-layer crystalline thin film structures were formed, consisting of ZrO 2 and Co 3 O 4 alternately grown on Si(100) substrates by atomic layer deposition at 300 • C using ZrCl 4 and Co(acac) 3 as the metal precursors and ozone as the oxygen precursor. The performance of the laminate films was dependent on the relative content of constituent oxide layers. The magnetization in these films was nonlinear, saturative, and with very weak coercive fields. Electrical measurements revealed the formation of significant polarization versus external field loops and implied some tendency toward memristive behavior. 59 have so far been quite scarce. In the earlier study devoted to ZrO 2 -Co 3 O 4 nanocomposites grown by ALD using the same chemistry based on cobalt acetylacetonate, zirconium tetrachloride and ozone, 59 the deposition process for cobalt oxide was investigated and established, determining suitable evaporation temperature for Co(acac) 3 precursor, as well as by recording linear relationship between growing mass and the amount of deposition cycles. Using the suitable deposition parameters, ALD growth of ZrO 2 /Co 3 O 4 double layers was demonstrated, together with their performance as dielectric and magnetic materials.In connection with the demand for materials, which could be applied in novel memories because of their advanced magnetic and electric properties, this study was devoted to the description of ZrO 2 -Co 3 O 4 nanolaminates, grown by ALD using ZrCl 4 and Co(acac) 3 as the metal precursors and ozone as the oxygen precursor. Elemental and phase composition, thickness, surface morphology and the polarization characteristics of the samples in the presence of an external magnetic or electric field were determined. In addition, the z E-mail: helina.seemen@ut.ee resistive switching and other electrical characteristics of ZrO 2 -Co 3 O 4 nanolaminates were studied to evaluate whether such films can imply a tendency toward memristive behavior. ExperimentalThe film growth experiments were carried out in a flow-type inhouse built hot-wall ALD reactor 60 at 300 ± 2 • C using ZrCl 4 (99.99%, Sigma Aldrich) and Co(acac) 3 (99.9%, Volatec Ltd.) [acac = tris(2,4-pentanedionato)] as the metal precursors, O 3 as the oxygen precursor and N 2 (99.999%, AGA) as the carrier and purge gas. The ZrCl 4 and Co(acac) 3 were evaporated at 160 ± 2• C and 120 ± 2 • C, respectively, from open boats inside the reactor and transported to the substrates by the carrier gas flow. O 3 was generated from O 2 (99.999%, AGA, Linde Group) in a BMT Messtechnik 802 N ozone generator. The O 3 concentration output of the generator measured with BMT Masstechnik 964 analyzer was ∼262 g/m 3 at the normal pressure. During the deposition, the chamber pressure varied in the range of 205-260 Pa. In all cases, a single ALD cycle was started with a metal precursor pulse and continued with a purge of the reaction zone with the pure carrier gas, oxygen precursor pulse and another purge. The precursor pulse durations and purge lengths in the case of ZrO 2 ...

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“…[42] The result is in agreement with earlier observations that Cl-based precursors with ozone typically allow higher growth temperatures than water-based ALD. [18] This is because ozone processes do not suffer from the decreasing OH-groups at the reaction surface when increasing the deposition temperature. [18,43] Similar to the TMA-based thermal ALD Al 2 O 3 passivation, [42] further increase in ALD temperature to 300 °C will deteriorate the chemical passivation.…”

Section: Effect Of Ald Deposition Temperaturementioning

confidence: 99%

“…[18] This is because ozone processes do not suffer from the decreasing OH-groups at the reaction surface when increasing the deposition temperature. [18,43] Similar to the TMA-based thermal ALD Al 2 O 3 passivation, [42] further increase in ALD temperature to 300 °C will deteriorate the chemical passivation. The reason is believed to be related to a lower amount of hydrogen present in the film and will be discussed later in the paper.…”

Section: Effect Of Ald Deposition Temperaturementioning

confidence: 99%

Ozone‐Based Atomic Layer Deposition of Al₂O₃ from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation

Bao

Laitinen

Sajavaara

et al. 2017

Adv Elect Materials

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Dimethylaluminum chloride (DMACl) as an aluminum source has shown promising potential to replace more expensive and commonly used trimethylaluminum in the semiconductor industry for atomic layer deposited (ALD) thin films. Here, the Al2O3 DMACl‐process is modified by replacing the common ALD oxidant, water, by ozone that offers several benefits including shorter purge time, layer‐by‐layer growth, and improved film adhesion. It is shown that the introduction of the ozone instead of water increases carbon and chlorine content in the Al2O3, while long ozone pulses increase the amount of interfacial hydrogen at silicon surface. These are found to be beneficial effects regarding the surface passivation and thus final device operation. Heat treatments (at 400 and 800 °C) are found to be essential for high quality surface passivation similar to ALD Al2O3 deposited from conventional precursors, which is correlated with the changes at the interface and related impurity distributions. The optimal deposition temperature is found to be 250 °C, which provides the best chemical passivation after thermal treatments.

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Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

Cited by 24 publications

References 39 publications

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides

Ozone‐Based Atomic Layer Deposition of Al₂O₃ from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation

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Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

Cited by 24 publications

References 39 publications

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides

Ozone‐Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation

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Product

Resources

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Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

Ozone‐Based Atomic Layer Deposition of Al₂O₃ from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation