Atomic layer doping of SiGe – fundamentals and device applications

Arsenic atomic layer doping in Si using AsH3

“…The basic idea of ALD is the separation of surface adsorption of dopant gases from the layer growth. The concept of atomically controlled processing has been demonstrated using low pressure (LP) chemical vapor deposition (LPCVD) and reduced pressure (RP) CVD for boron-(B) and phosphorus-(P) in Si, SiGe and Ge [1,2]. P and Arsenic (As) vapor phase doping, which is a similar approach as ALD using SiH 4 precursor in Si, using RPCVD is also reported in Ref.…”

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

“…Atomic-level control has been realized for epitaxy (Si, Ge), deposition (W, nitride), doping (P, B, C) and layer-by-layer etching. [9][10][11] The final goal of the atomic layer approach is the generalization of the atomic-order surface reaction processes and the creation of new properties in Si-based ultimate small structures which will lead to nanometer scale Si devices as well as Si-based quantum devices (Fig. 1).…”

“…1). Based on the investigation of surface reaction processes, the concept of atomic layer process control 3,6,7,[9][10][11] has been demonstrated for high-performance Si 0:65 Ge 0:35 -channel p-type MOS fieldeffect transistors (pMOSFETs) with a 0.12 mm gate length by utilizing in-situ impurity-doped Si 1Àx Ge x selective epitaxy on the source/drain regions at 550 C, 12) for ultrathin P barriers in infrared SiGe/Si heterojunction internal photoemission detectors, 13) and for B and P base doping in npn and pnp hetero-bipolar transistors (HBTs). [14][15][16] In this review, we describe ultraclean low-temperature low-pressure CVD processing using SiH 4 and GeH 4 gases.…”

Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors

“…Our concept of atomically controlled processing is based on atomic-order surface reaction control (1)(2)(3). The final goal is the generalization of atomic-order surface reaction processes and the creation of new properties in Si-based ultimate small structures which will lead to nanometer scale Si devices as well as Si-based quantum devices (Fig.…”

“…The deposition rate, the Ge fraction and the dopant concentration have been expressed quantitatively by modified Langmuir-type rate equation (2). Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH 4 , GeH 4 , NH 3 , PH 3 , B 2 H 6 CH 4 and SiH 3 CH 3 ) on Si(100) and Ge(100) were generalized based on the Langmuir-type model (3).…”