2022
DOI: 10.1002/admi.202200575
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Atomic Layer Engineering of Aluminum‐Doped Zinc Oxide Films for Efficient and Stable Perovskite Solar Cells

Abstract: promising light absorber materials, demon strating low-cost solution processing, ease of fabrication, and outstanding optoelectronic properties. [1,2] Since the first report on the perovskite solar cells (PSCs) employing methylammonium lead iodide (MAPbI 3 ), [3] their power conversion efficiency (PCE) has now exceeded 25% for small-area cells. [4,5] The high efficiency of PSCs is achieved by tuning the perovskite layer through compositional engineering, [6][7][8] surface passivation, [9][10][11][12][13] and/o… Show more

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Cited by 26 publications
(23 citation statements)
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“…conducted a study on the characteristics of ETL and device stability by controlling the termination of the AZO layer. [ 142 ] Consequently, the perovskite solar cells with a controlled ALD–AZO layer showed better moisture stability than ZnO‐based perovskite solar cells, which maintained more than 80% of initial efficiency after 100 h under 40% relative humidity without encapsulation. Although the ALD technique has not yet been applied in the PQD solar cell field, it has been used in other optoelectronic devices, such as LEDs.…”
Section: Device Viewpoints On the Stability Of Cspbi3 Pqd Solar Cellsmentioning
confidence: 99%
“…conducted a study on the characteristics of ETL and device stability by controlling the termination of the AZO layer. [ 142 ] Consequently, the perovskite solar cells with a controlled ALD–AZO layer showed better moisture stability than ZnO‐based perovskite solar cells, which maintained more than 80% of initial efficiency after 100 h under 40% relative humidity without encapsulation. Although the ALD technique has not yet been applied in the PQD solar cell field, it has been used in other optoelectronic devices, such as LEDs.…”
Section: Device Viewpoints On the Stability Of Cspbi3 Pqd Solar Cellsmentioning
confidence: 99%
“…However, it was later corroborated by researchers that the hysteresis index of a solar cell somehow originates from its intrinsic properties, rather than the scan rates or direction of the applied bias. Amongst them, the ferroelectric and large dielectric properties of perovskite sensitizers at the nano-scale [34,134], the interfacial ferroelectric characteristics of the device [18], ion migration [35,36], mismatched energy band alignment of the device layers [38,39], slower trapping-detrapping of charges at the grain boundaries or the barriers of different layers [40,135], inefficient charge transportation or extraction by ETLs and HTLs [42,43], imbalance in the charge transport through HTLs and ETLs [44,45], various structural or chemical changes of the involved materials (e.g., perovskite absorber, ETL, and HTL) during operation or in response to various hostile environmental parameters such as temperature and humidity [134,136], undesirable charge trapping at the defect sites of different layers of the device created by such deteriorations [137,138], etc., are attributed to such anomalous PSC device behavior. Some researchers even mentioned it as a light-induced hysteresis in solar cell devices [35,129,139].…”
Section: Hysteresis Problem Of Perovskitementioning
confidence: 99%
“…The reason behind such PV behavior is still unknown. However, researchers have attributed several factors to it, such as the large dielectric properties of perovskite sensitizers at the nano-scale [33,34], interfacial ferroelectric characteristics of the device [15], ion-migration [35][36][37], mismatched energy band alignment of the device layers [38,39], the slower trapping-detrapping of charges at the grain boundaries or the barriers of different layers [40,41], inefficient charge transportation or extraction by ETLs and HTLs [42,43], and imbalance in the charge transport through HTLs and ETLs [44,45], etc.…”
Section: Introductionmentioning
confidence: 99%
“…[5,[42][43][44][45][46][47][48][49] Remarkably, the state-of-the-art PCE (22.6%) among reported low-temperature processed PSCs was achieved for a device based on a sol-gel-derived ZnO layer modified by potassium chloride. [36] On the other hand, to avoid the participation of organic ligand in the synthetic process and/ or negligible organic impurities in the resulting ZnO films, alternative strategies for ZnO film growth by an atomic layer deposition (Table S1, entry 22, Supporting Information), [50] and a solution-processed combustion synthesis (Table S1, entry 21, Supporting Information, ) [31] were developed. The latter novel combustion synthetic approach delivered PSCs of remarkable PCEs of 18.82% and 19.84% for Cs 0.05 FA 0.81 MA0.…”
Section: Introductionmentioning
confidence: 99%