Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films

Leskelä, Markku; Ritala, Mikko

doi:10.1051/jphyscol:19955111

Cited by 30 publications

(35 citation statements)

References 48 publications

(89 reference statements)

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“…[1][2][3][4] The uniformity of deposition and control over thickness can be attributed to the self-limiting mechanism of film growth, with the film being ͑ideally͒ deposited one monolayer at a time. [1][2][3][4] The uniformity of deposition and control over thickness can be attributed to the self-limiting mechanism of film growth, with the film being ͑ideally͒ deposited one monolayer at a time.…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of atomic layer deposition at the feature scale

Gobbert¹,

Prasad²,

Cale³

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSimulations of chemical vapor deposition diamond film growth using a kinetic Monte Carlo model and twodimensional models of microwave plasma and hot filament chemical vapor deposition reactorsWe present a transient Boltzmann equation based transport and reaction model for atomic layer deposition ͑ALD͒ at the feature scale. The transport model has no adjustable parameters. In this article, we focus on the reaction step and the postreaction purge steps of ALD. The heterogeneous chemistry model consists of reversible adsorption of a reactant on a single site, and irreversible reaction of a second gaseous reactant with the adsorbed reactant. We conduct studies on the effect of the kinetic rate parameter associated with the reaction. We provide results for number densities of gaseous species, fluxes to the surface of the feature, and surface coverage of the adsorbing reactant as functions of time. For reasonable reaction rate parameter values, the time scale for gas transport is much smaller than that for reaction and desorption. For these cases, an analytic expression for the time evolution of the surface coverage of the adsorbing reactant provides a good approximation to the solution obtained from the transport and reaction model. The results show that fractional coverage of the adsorbing reactant reduces significantly in the reaction step due to reaction with the gaseous reactant and desorption. Larger values of the reaction rate parameter lead to larger reductions in the fractional coverage during the reaction step. For smaller values of the reaction rate parameter, the decrease in coverage is dominated by desorption. The surface coverage of the adsorbing reactant also decreases during purge steps, due to desorption.

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Section: Introductionmentioning

confidence: 99%

Modeling and simulation of atomic layer deposition at the feature scale

Gobbert¹,

Prasad²,

Cale³

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In addition, BaS is a potential though scarcely examined phosphor host material for thin film electroluminescent (TFEL) displays. For example, under anhydrous conditions Ba(thd) 2 crystallizes as a tetramer Ba 4 (thd) 8 but if water traces are present, a pentamer Ba 5 (thd) 9 (OH)(H 2 O) 3 is crystallized. [1][2][3][4][5] Due to its small charge to radius ratio barium typically prefers coordination numbers from 8 to 12 but in a monomeric Ba(thd) 2 the coordination number of barium would be only four.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Epitaxy Growth of BaS and BaS:Ce Thin Films from In Situ Synthesized Ba(thd)2

Saanila¹,

Ihanus²,

Ritala³

et al. 1998

Chem. Vap. Deposition

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BaS and BaS:Ce thin films were grown by Atomic Layer Epitaxy (ALE) from Ba(thd) 2 synthesized in situ during the film growth process by a gas-solid reaction between Hthd and Ba(OH) 2 . The in situ synthesis avoids problems related to aging of Ba(thd) 2 solid source when heated for prolonged times in normal ALE or CVD processes. H 2 S was used as a sulfur source. Self-limiting film growth with a rate of about 0.8 Å/cycle was obtained between 300 and 350°C. The films were polycrystalline and strongly oriented in the (100) direction. BaS:Ce films were deposited using Ce(thd) 4 as a dopant source. In photoluminescence these films gave a broad emission spectrum centered around 525 nm. Electroluminescence measurements gave C.I.E. color coordinates x = 0.46 and y = 0.50.Keywords: Barium sulfide, Cerium, Atomic layer epitaxy, Thin films, Electroluminescence Recently Soininen et al. [25,26] introduced a novel method for synthesizing a related compound (Sr(thd) 2 ) n in situ during an ALE process. The in situ synthesis was realized by volatilizing the liquid Hthd ligand under a reduced pressure inside the ALE reactor and leading the vapor over a

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“…[1][2][3] Since in these circuits the device dimensions shrink into the deep submicron range, a good step coverage and via-fill capability are required from the copper deposition process. 13,14 Although ALE has been used in depositing many different materials, including II-VI and III-V compounds, oxides, nitrides, fluorides, and group IV elements, 10,12-15 studies on ALE growth of metals are sparse. [4][5][6][7][8][9] The strict conformality requirements also make it tempting to examine the feasibility of the atomic layer epitaxy ͑ALE͒ technique [10][11][12][13][14][15] for copper deposition.…”

Section: Introductionmentioning

confidence: 99%

“…11,13,14 Hydrogen has only moderate reactivity unless its dissociation to atomic hydrogen is effectively catalyzed. 11,13,14 Hydrogen has only moderate reactivity unless its dissociation to atomic hydrogen is effectively catalyzed.…”

Section: Introductionmentioning

confidence: 99%

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Deposition of copper films by an alternate supply of CuCl and Zn

Juppo

Ritala

Leskelä

1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inAtomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing Deposition of copper thin films by an alternate supply of CuCl and Zn was examined. Due to a reversible dissolution of Zn into the Cu film, no self-limiting growth characteristic for the atomic layer epitaxy method could be achieved. The resulting films contained about 3 at. % zinc while chlorine residue contents were below 0.5 at. %. The films were polycrystalline consisting of rather coarse grains.

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Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films

Cited by 30 publications

References 48 publications

Modeling and simulation of atomic layer deposition at the feature scale

Modeling and simulation of atomic layer deposition at the feature scale

Atomic Layer Epitaxy Growth of BaS and BaS:Ce Thin Films from In Situ Synthesized Ba(thd)2

Deposition of copper films by an alternate supply of CuCl and Zn

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