1994
DOI: 10.1016/0169-4332(94)90189-9
|View full text |Cite
|
Sign up to set email alerts
|

Atomic layer epitaxy of device quality AlGaAs and AlAs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2002
2002
2020
2020

Publication Types

Select...
5
1
1

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(3 citation statements)
references
References 16 publications
0
3
0
Order By: Relevance
“…The first application was reported by the group of Bedair and coworkers in 1994. This ALD research, known as 'atomic layer epitaxy' (ALE) at that time, was on GaAs, AlGaAs and AlAs films used as absorbers in multijunction solar cells [4,5]. Reports on the application of ZnSe buffer layers for CIGS solar cells [6], and boron-doped ZnO films as transparent conductive oxide (TCO) deposited by ALD followed shortly afterwards [96][97][98][99][100] a Cu x S or CuInS 2 are infiltrated into TiO 2 pores, no exact thickness is specified.…”
Section: Introductionmentioning
confidence: 99%
“…The first application was reported by the group of Bedair and coworkers in 1994. This ALD research, known as 'atomic layer epitaxy' (ALE) at that time, was on GaAs, AlGaAs and AlAs films used as absorbers in multijunction solar cells [4,5]. Reports on the application of ZnSe buffer layers for CIGS solar cells [6], and boron-doped ZnO films as transparent conductive oxide (TCO) deposited by ALD followed shortly afterwards [96][97][98][99][100] a Cu x S or CuInS 2 are infiltrated into TiO 2 pores, no exact thickness is specified.…”
Section: Introductionmentioning
confidence: 99%
“…In what may have been the earliest application of ALD to solar cells, a series of papers in the early 1990s outlined the deposition of AlGaAs, AlAs, and GaAs as absorbers by ALD for tandem III-V solar cells where Si and C were used as the n-type and p-type dopants, respectively. [129][130][131][132] The reactor in these studies was a dual mode ALD and MOCVD chamber with trimethygallium, trimethylaluminum, and arsine as the reactant gases applied at deposition temperatures of 550-650 C. With a two junction device structure, efficiencies of almost 16% were achieved under concentrated light as shown in Fig. 16.…”
Section: Tandem Devices a Iii-v Multijunction Concentrator Devicesmentioning
confidence: 99%
“…At that stage GaAs and AIGaAs films were deposited in the group of 8edair and co-workers for the application in multijunction (tandem) solar cells [4,5,6].…”
Section: Ald For Solar Cell Manufacturingmentioning
confidence: 99%