Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication

Kim, Dae Sik; Kim, Jae Bin; Ahn, Da Won; Choe, Jin Hyun; Kim, Jin Seok; Jung, Eun Su; Pyo, Sung Gyu

doi:10.1007/s13391-023-00409-4

Cited by 15 publications

(5 citation statements)

References 132 publications

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“…There are many reports about how to obtain selectivity between ALE SiN and silicon oxide [265]. ALE etching of high-K [266] and metal materials [267,268] has gradually become a research hotspot to better support advanced processes such as V-GAA [269][270][271].…”

Section: Precise Etching: Atomic Layer Etching (Ale)mentioning

confidence: 99%

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Radamson,

Miao,

Zhou

et al. 2024

Nanomaterials

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After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unknown. In this era, 3D transistors in the form of gate-all-around (GAA) transistors are being considered as an excellent solution to scaling down beyond the 5 nm technology node, which solves the difficulties of carrier transport in the channel region which are mainly rooted in short channel effects (SCEs). In parallel to Moore, during the last two decades, transistors with a fully depleted SOI (FDSOI) design have also been processed for low-power electronics. Among all the possible designs, there are also tunneling field-effect transistors (TFETs), which offer very low power consumption and decent electrical characteristics. This review article presents new transistor designs, along with the integration of electronics and photonics, simulation methods, and continuation of CMOS process technology to the 5 nm technology node and beyond. The content highlights the innovative methods, challenges, and difficulties in device processing and design, as well as how to apply suitable metrology techniques as a tool to find out the imperfections and lattice distortions, strain status, and composition in the device structures.

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Section: Precise Etching: Atomic Layer Etching (Ale)mentioning

confidence: 99%

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Radamson,

Miao,

Zhou

et al. 2024

Nanomaterials

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“…The resulting versatility and precision explain the success of RIE in the semiconductor industry, although the ever-scaling down of semiconductor devices (memory devices, computing elements, etc.) highlights the emergence of new constraints, including etching profile control, short channel effect and material selection [186]. Today, a more refined approach is offered by atomic layer etching (ALE) to remove material layer by layer with atomic precision.…”

Section: Surface Etchingmentioning

confidence: 99%

“…Today, a more refined approach is offered by atomic layer etching (ALE) to remove material layer by layer with atomic precision. This involves a self-limiting, cyclic process utilizing selective chemical reactions and passivation steps, allowing for the precise control and preservation of underlying layers [186]. These structures are formed using 2.1 µm diameter PS spheres as etching masks (reproduced with permission) [164].…”

Section: Surface Etchingmentioning

confidence: 99%

From Basics to Frontiers: A Comprehensive Review of Plasma-Modified and Plasma-Synthesized Polymer Films

Dufour

2023

Polymers

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This comprehensive review begins by tracing the historical development and progress of cold plasma technology as an innovative approach to polymer engineering. The study emphasizes the versatility of cold plasma derived from a variety of sources including low-pressure glow discharges (e.g., radiofrequency capacitively coupled plasmas) and atmospheric pressure plasmas (e.g., dielectric barrier devices, piezoelectric plasmas). It critically examines key operational parameters such as reduced electric field, pressure, discharge type, gas type and flow rate, substrate temperature, gap, and how these variables affect the properties of the synthesized or modified polymers. This review also discusses the application of cold plasma in polymer surface modification, underscoring how changes in surface properties (e.g., wettability, adhesion, biocompatibility) can be achieved by controlling various surface processes (etching, roughening, crosslinking, functionalization, crystallinity). A detailed examination of Plasma-Enhanced Chemical Vapor Deposition (PECVD) reveals its efficacy in producing thin polymeric films from an array of precursors. Yasuda’s models, Rapid Step-Growth Polymerization (RSGP) and Competitive Ablation Polymerization (CAP), are explained as fundamental mechanisms underpinning plasma-assisted deposition and polymerization processes. Then, the wide array of applications of cold plasma technology is explored, from the biomedical field, where it is used in creating smart drug delivery systems and biodegradable polymer implants, to its role in enhancing the performance of membrane-based filtration systems crucial for water purification, gas separation, and energy production. It investigates the potential for improving the properties of bioplastics and the exciting prospects for developing self-healing materials using this technology.

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“…3D fabrication for devices with high-aspect-ratio structures. The development of anisotropic ALE is important and will be required to meet the requirement of high-precision lateral etching for these structures and to act as a correction step for selective ALD [29,30]. Understanding how anisotropic ALE processes can create vertical profiles is a critical next step for this technology [26].…”

Section: A Challenges and Future Perspectivesmentioning

confidence: 99%

Atomic and Close-to-Atomic Scale Manufacturing: Status and Challenges

Hafeez,

Xie,

Luo

2023

2023 28th International Conference on Automation and Computing (ICAC)

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Next-generation lithography techniques such as Extreme Ultraviolet Lithography have started to reach their physical limits and will not be able to meet the requirements of future Post-Moore Era Integrated Circuit chips that will be based on quantum, photonic, and DNA computing. These future chips and the next generation of quantum products will require sub-10nm and even atomic-scale functional features. Promising candidates for atomic and close-to-atomic scale manufacturing include well-established tip-based techniques such as Scanning Tunnelling Microscopy (STM) and Atomic Force Microscopy (AFM), however, they suffer from severely low throughput, although parallel tips have been suggested to increase the throughput. The integration of these techniques with others such as AFM in Scanning Electron Microscopy has created new hybrid techniques that have greatly enhanced the capabilities of the standalone process. On the other hand, higher throughput techniques like atomic layer etching (ALE) suffer from poor process control and defects despite being promising candidates due to the self-limiting nature of the processes. Studies into laser processing techniques are being investigated to test the feasibility of laser beam-based atomic scale precision manufacturing. Furthermore, the recent progress in quantum simulations has promoted the development of the optical tweezer towards atomic scale manufacturing.

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Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication

Cited by 15 publications

References 132 publications

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

From Basics to Frontiers: A Comprehensive Review of Plasma-Modified and Plasma-Synthesized Polymer Films

Atomic and Close-to-Atomic Scale Manufacturing: Status and Challenges

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