Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer

Du, Fangzhou; Jiang, Yang; Qiao, Zepeng; Wu, Zhanxia; Tang, Chuying; He, Jiaqi; Zhou, Guangnan; Cheng, Wei-Chih; Tang, Xinyi; Wang, Qing; Yu, Hongyu

doi:10.1016/j.mssp.2022.106544

Cited by 7 publications

(3 citation statements)

References 24 publications

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“…Raman spectroscopy demonstrates the retention of W 5 N 6 during removal of MoS 2 (Figure 4e). Our approach demonstrates the potential of W 5 N 6 as atomic 3D etch stop 22 and opens up new routes toward self-aligned multipatterning methods. 23 The resulting electrical devices show an order-of-magnitude improvement in current compared to traditional contacts, which corroborates the potential of W 5 N 6 -based semimetallic contacts (Figure 4f) for the integration of 2D materials for future electronics as well as highlights its application in protective electrochemical coatings and oxidation barriers.…”

Section: Metalmentioning

confidence: 87%

Tungsten Nitride (W₅N₆): An Ultraresilient 2D Semimetal

Chin,

Wang,

Gulo

et al. 2023

Nano Lett.

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Two-dimensional transition metal nitrides offer intriguing possibilities for achieving novel electronic and mechanical functionality owing to their distinctive and tunable bonding characteristics compared to other 2D materials. We demonstrate here the enabling effects of strong bonding on the morphology and functionality of 2D tungsten nitrides. The employed bottom-up synthesis experienced a unique substrate stabilization effect beyond van-der-Waals epitaxy that favored W 5 N 6 over lower metal nitrides. Comprehensive structural and electronic characterization reveals that monolayer W 5 N 6 can be synthesized at large scale and shows semimetallic behavior with an intriguing indirect band structure. Moreover, the material exhibits exceptional resilience against mechanical damage and chemical reactions. Leveraging these electronic properties and robustness, we demonstrate the application of W 5 N 6 as atomic-scale dry etch stops that allow the integration of high-performance 2D materials contacts. These findings highlight the potential of 2D transition metal nitrides for realizing advanced electronic devices and functional interfaces.

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Section: Metalmentioning

confidence: 87%

Tungsten Nitride (W₅N₆): An Ultraresilient 2D Semimetal

Chin,

Wang,

Gulo

et al. 2023

Nano Lett.

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“…These improvements in electrical performance show the great potential of the O 2 -BCl 3 plasma ALE technique in AlGaN/GaN MOS-HEMTs fabrication for power switching applications. With this atomic level-controlled low-damage gate recess process, normally off AlGaN/GaN MOS-HEMTs have been fabricated by Hu et al in 2018 [70] . The resulting devices exhibit low on-resistance (10.1 Ω•mm) with a threshold voltage over 2.2 V, and a saturation current of 518 mA/mm.…”

Section: O 2 -Bcl 3 Systemmentioning

confidence: 99%

Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

Guan¹,

Li²,

Che³

et al. 2022

J. Semicond.

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With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level. Compared with the traditional wet etching and continuous plasma etching, plasma atomic layer etching (ALE) of GaN has the advantages of self-limiting etching, high selectivity to other materials, and smooth etched surface. In this paper the basic properties and applications of GaN are presented. It also presents the various etching methods of GaN. GaN plasma ALE systems are reviewed, and their similarities and differences are compared. In addition, the industrial application of GaN plasma ALE is outlined.

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“…However, controlling the film thickness during the atomic‐scale patterning required for next‐generation interconnect processes has been challenging with RIE. [ 30,31 ] Anisotropic ALE has been suggested as an alternative to RIE; anisotropic ALE addresses this challenge by removing layers with atomic‐scale precision, offering excellent uniformity and a lower surface roughness compared with that achieved through the RIE process. [ 32–35 ] The anisotropic ALE process consists of a surface modification step and a removal step using ion energy and operates based on a self‐limiting reaction.…”

Section: Introductionmentioning

confidence: 99%

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Kim,

Kang,

et al. 2023

Plasma Processes & Polymers

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The plasma atomic layer etching (ALE) process for Ru was developed with surface fluorination and ion bombardment. We employed two methods for surface fluorination: (i) fluorocarbon deposition using CHF3 or C4F8 plasmas and (ii) chemisorption and diffusion with CF4 plasma. C4F8 plasma generated a more fluorine rich fluorocarbon layer on the Ru surface compared with CHF3 plasma, and a higher etch per cycle (EPC) of 1.5 nm/cycle was achieved with C4F8 plasma, in contrast to the 0.6 nm/cycle achieved with CHF3 plasma. Moreover, chemisorption and diffusion with CF4 plasma yielded an EPC of 1.2 nm/cycle. The ALE process using CHF3 plasma shows the lowest fluorine residue and lowest surface roughness compared with the ALE process using C4F8 and CF4 plasmas.

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Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer

Cited by 7 publications

References 24 publications

Tungsten Nitride (W₅N₆): An Ultraresilient 2D Semimetal

Tungsten Nitride (W₅N₆): An Ultraresilient 2D Semimetal

Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

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Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer

Cited by 7 publications

References 24 publications

Tungsten Nitride (W5N6): An Ultraresilient 2D Semimetal

Tungsten Nitride (W5N6): An Ultraresilient 2D Semimetal

Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

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Product

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Tungsten Nitride (W₅N₆): An Ultraresilient 2D Semimetal

Tungsten Nitride (W₅N₆): An Ultraresilient 2D Semimetal