Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces

Yokoyama, Shiyoshi; Ikeda, Norihiko; Kajikawa, Kouji; Nakashima, Y.

doi:10.1016/s0169-4332(98)00083-x

Cited by 48 publications

(32 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further, the processing requirements of modern logic at the smallest technology nodes additionally have a stringent thermal budget such that depositions should be performed at as low of a temperature as possible and at least below 450 • C. More than a decade ago, early work in SiN x thermal ALD and PEALD were shown with various chlorosilanes and nitridation reactants such as ammonia or hydrazine. [4][5][6] These depositions have generally required processing at temperatures above the thermal budget of current processes and have the added disadvantage of Cl residues and byproducts from the reactions. PEALD of SiN x based on SiH 4 has also been explored to avoid the Cl contamination issue, but while this can maintain desired temperature range, the reaction requires extensive SiH 4 exposure in both time and gas flow.…”

Section: Introductionmentioning

confidence: 99%

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

et al. 2016

View full text Add to dashboard Cite

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

show abstract

Section: Introductionmentioning

confidence: 99%

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

et al. 2016

View full text Add to dashboard Cite

show abstract

“…In this scheme, the precursors exhibit reaction selectivity with surface species, so reduction of the precursors occurs only on specific surfaces. Similarly, AS-ALD was investigated on H-terminated Si and CVD-grown Si 3 N 4 surfaces by using SiH 2 Cl 2 and NH 3 as a precursor and a reactant, respectively [90]. SiN x films were formed only on H-terminated surfaces.…”

Section: Inherent Surface Reactivitymentioning

confidence: 99%

“…The growth of SiN x begins from the formation of NÀH bonding from the reaction of surface H and NH 3 . The SiH 2 Cl 2 precursor reacts only at NÀH terminated sites, resulting in the growth of SiN x [90]. Recently, AS-ALD HfO 2 was reported on two different surface materials, Si and Cu [91].…”

Section: Inherent Surface Reactivitymentioning

confidence: 99%

Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

View full text Add to dashboard Cite

In conventional device fabrication, patterning is a top-down process based largely on photolithography and etching and is a main bottleneck for device downscaling. Atomic layer deposition (ALD) can provide an alternative bottom-up method for patterning when used in conjunction with self-assembled materials and selective chemistries. As presented in previous chapters, ALD is a powerful technique for depositing thin films for nanoscale device fabrication thanks to its excellent conformality, atomic scale thickness controllability, and large-area uniformity. Film growth controlled by surface reactions is one of the inherent properties of ALD. Because in an ideal ALD process, all of the precursors used for ALD react with each other only at the surface, highly conformal films can be deposited even inside complex 3D structures. By taking advantage of this inherent surface reaction property, ALD can be utilized for patterning based on a bottom-up process. In the following chapter, selective deposition methods will be presented. The contents include the surface modification techniques that are employed to exploit the surface reaction properties of ALD and related patterning processes with reported results. Concept of Area-Selective Atomic Layer DepositionFilm growth by ALD begins with formation of nuclei through a reaction of precursor molecules and surface species. Once nuclei are formed on a surface, the growth of the film may proceed by growth and coalescence of the nuclei, whereas if no nucleation occurs no film will be deposited. Therefore, the deposition characteristics of ALD strongly depend on the surface properties of the substrate. For example, in many cases, the nucleation of ALD is easy on hydrophilic OH-terminated substrates (e.g., SiO 2 ), while it is difficult on hydrophobic H-terminated surfaces (e.g., Si) [1][2][3][4]. Similarly, a nucleation delay in ALD, typically called the incubation time, is due to difficulty of nucleation at the surface. The nucleation delay and the variability of the growth characteristics depending on the surface can be problematic in typical thin

show abstract

“…Among materials for the dielectric thin films, silicon nitride (SiN x ) has secured significant attention in various application fields including insulating layers in capacitor [1][2][3], gate insulators for thin film transistor [4][5][6], and encapsulation layers on electronic devices [7,8]. While a variety of deposition methods have been employed to deposit silicon nitride, including sputtering [9,10], atomic layer deposition (ALD) [11][12][13], and chemical vapor deposition (CVD) [14,15] the conventional methods still have technical limitations for low temperature encapsulation, whereby sputtering leaves a host of defects, the deposition rate of ALD is too low to be commercialized, and traditional CVD requires high process temperature condition to decompose reactant gases. To overcome these limitations of conventional methods, diverse variants of CVD for low temperature processes have been developed such as metalorganic chemical vapor deposition (MOCVD) [16,17], oxidative chemical vapor deposition (oCVD) [18], and so on.…”

Section: Introductionmentioning

confidence: 99%

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation

Lee

Cho

et al. 2020

Micromachines

View full text Add to dashboard Cite

In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 °C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR).

show abstract

Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces

Cited by 48 publications

References 6 publications

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

Nanopatterning by Area‐Selective Atomic Layer Deposition

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation

Contact Info

Product

Resources

About