Atomic Mixing Induced by Ion Irradiation of V/Cu Multilayers*

Sheng, Yuchen; Zhang, Hongpeng; Shen, Tielong; Wei, Kongfang; Kang, Long; Li, Rui; Zhang, Tongmin; Li, Bingsheng

doi:10.1088/0256-307x/37/3/036101

Chinese Phys. Lett.

2020

DOI: 10.1088/0256-307x/37/3/036101

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Atomic Mixing Induced by Ion Irradiation of V/Cu Multilayers*

Yuchen Sheng

Hongpeng Zhang

Tielong Shen

et al.

Abstract: Bulk Cu/V multilayers simultaneously possess high strength and excellent radiation resistance thanks to their high density of interfaces. Irradiation-induced atomic mixing of Cu/V multilayers has been less investigated. Here, we investigate the ion irradiation of bulk Cu/V multilayers exposed to H 2 + … Show more

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2023

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Structural Properties of He-Irradiated Zr/Nb Multilayer Investigated by Grazing Incidence X-ray Diffraction

Wang

et al. 2023

Crystals

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Zr/Nb nanoscale multilayers are regarded as one of the important candidate materials used in next-generation reactors. Understanding structural evolution induced by ion bombardment is crucial for the evaluation of lifetime performance. Magnetron sputter-deposited Zr/Nb multilayers with a periodicity of 7 nm were subjected to 300 keV He ion irradiation with three different fluences at room temperature. The depth-resolved strain and damage profiles in the Zr/Nb multilayers were investigated by grazing incidence X-ray diffraction. The tensile strain was found in the deposited Zr/Nb films. After He ion irradiation, the intensity of diffraction peaks increased. The change in diffraction peaks depends on He fluence and incident angle. Irradiation-induced pre-existing defect annealing was observed and the ability to recover the microstructure was more significant in the Zr films compared to the Nb films. Furthermore, the efficiency of defect annealing depends on the concentration of pre-existing defects and He fluence. When the He fluence exceeds the one for pre-existing defect annealing, residual defects will be formed, such as 1/3<12¯10> and 1/3<11¯00> dislocation loops in the Zr films and 1/2<111> dislocation loops in the Nb films. Finally, introducing deposited defects and interfaces can improve the radiation resistance of Zr/Nb nanoscale multilayers. These findings can be extended to other multilayers in order to develop candidate materials for fusion and fission systems with high radiation resistance.

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Structural Properties of He-Irradiated Zr/Nb Multilayer Investigated by Grazing Incidence X-ray Diffraction

Wang

et al. 2023

Crystals

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show abstract

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Atomic Mixing Induced by Ion Irradiation of V/Cu Multilayers*

Cited by 1 publication

References 29 publications

Structural Properties of He-Irradiated Zr/Nb Multilayer Investigated by Grazing Incidence X-ray Diffraction

Structural Properties of He-Irradiated Zr/Nb Multilayer Investigated by Grazing Incidence X-ray Diffraction

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