Atomic model for grain boundary and surface diffusion

Pierre, Benoist; Martin, G.

doi:10.1016/0040-6090(75)90255-2

Cited by 51 publications

(23 citation statements)

References 13 publications

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“…To derive the model we start from the well-known analytical description of Benoist and Martin [13]. Monte-Carlo studies based on this model were performed, e. g., by Murch and coworkers [14,15] and by Metsch et al [16].…”

Section: The Applied Modelmentioning

confidence: 99%

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⁵⁹Fe Grain Boundary Diffusion in Nanostructured γ-Fe–Ni

Divinski¹,

Hisker²,

Kang³

et al. 2002

MEKU

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Section: The Applied Modelmentioning

confidence: 99%

“…To overcome this difficulty the model of Benoist and Martin [13] is extended here. Let us suppose that a particle is within the GB slab and D gb 4D v .…”

Section: The Applied Modelmentioning

confidence: 99%

⁵⁹Fe Grain Boundary Diffusion in Nanostructured γ-Fe–Ni

Divinski¹,

Hisker²,

Kang³

et al. 2002

MEKU

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“…Such a simple model is clearly very different from atomistic models of interfaces and there is a danger that it is too simple to be realistic. However, simulations using jump models of interfaces (but not true atomistic models) have shown that the slab model should be adequate for analysing experimental data [8,9].…”

Section: Experiments and Phenomenologymentioning

confidence: 99%

Grain Boundary Diffusion in Ceramics

Atkinson

Monty²

1989

Surfaces and Interfaces of Ceramic Materials

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ABSTRACT. Diffusion at a grain boundary occurs at a different rate from that in the bulk crystalline lattice. Usually bulk lattice diffusion is relatively slow and boundary diffusion is much more rapid so that the boundary acts as an easy (or short circuit) path for transport in parallel with bulk diffusion.The experimental approaches to direct measurement of tracer diffusion along grain boundaries are well-established and, in principle, can give the grain boundary diffusion coefficient and the grain boundary width (or, in the case of an impurity atom, the product of boundary width and the segregation coefficient).Published data cover a range of materials in doped and undoped forms, and specimen types (single crystals, bicrystals, sintered powders and thin films), with host atoms or impurities as the diffusing species. In addition, atomistic simulations have been carried out using static lattice methods to help interpret the experimental observations. There is much disagreement in the detailed results in this field, but certain general conclusions are emerging.

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Section: Experimental Methodsmentioning

confidence: 99%

Interfacial Diffusion

Atkinson

1988

MRS Proc.

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The current understanding of mass transport at interfaces in solids is reviewed.The materials covered are metals, semiconductors and ionic compounds and the interfaces are mainly grain boundaries.In metals and semiconductors grain boundary diffusion is always faster than the bulk and both experiments and theory support the concept of narrow (about 1 nm) pathways in which fast diffusion occurs by a point defect mechanism.In ionic compounds, however, experiments have indicated that in some materials grain boundary diffusion is faster in the bulk whereas in others it is slower. Furthermore, different workers have reached different conclusions in, ostensibly, the same materials. The possible reasons for this lack of convergence are discussed.

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Atomic model for grain boundary and surface diffusion

Cited by 51 publications

References 13 publications

⁵⁹Fe Grain Boundary Diffusion in Nanostructured γ-Fe–Ni

⁵⁹Fe Grain Boundary Diffusion in Nanostructured γ-Fe–Ni

Grain Boundary Diffusion in Ceramics

Interfacial Diffusion

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Atomic model for grain boundary and surface diffusion

Cited by 51 publications

References 13 publications

59Fe Grain Boundary Diffusion in Nanostructured γ-Fe–Ni

59Fe Grain Boundary Diffusion in Nanostructured γ-Fe–Ni

Grain Boundary Diffusion in Ceramics

Interfacial Diffusion

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⁵⁹Fe Grain Boundary Diffusion in Nanostructured γ-Fe–Ni

⁵⁹Fe Grain Boundary Diffusion in Nanostructured γ-Fe–Ni