Atomic Oxidation of Ultra Thin SiGe Using Afterglow Oxygen Plasma

Chen, P. C.; Lin, J. Y.; Hsut, Y. J.; Hwang, H.L.

doi:10.1557/proc-281-485

Cited by 5 publications

(1 citation statement)

References 11 publications

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“…A variety of oxidation conditions have been investigated including dry, 8 wet, 9 ozone, 10 fluorine 11 ambients, oxygen plasma, 12 UV assisted oxidation, 13 a variety of pressures, 14 initial germanium concentrations, 15 and oxide thicknesses, as well as SiGe-oninsulator. Although the oxidation of Si is described by the well established Deal-Grove 6 and Massoud 7 models, the oxidation of SiGe is not as well characterized.…”

Section: Introductionmentioning

confidence: 99%

Ge concentrations in pile-up layers of sub-100-nm SiGe films for nano-structuring by thermal oxidation

Long

Galeckas

Kuznetsov

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The data and analysis presented herein aims to facilitate the design and manufacture of SiGe based nanostructures and devices by describing the enhancement of Ge concentration in sub-100-nm thin films of SiGe by dry thermal oxidation. Thin films of SiGe were restructured by using thermal oxidation induced self-organization of Si and Ge atoms to create a layer of enhanced Ge concentration. The dry thermal oxidations were carried out at temperatures between 800 C and 1000 C. The influence of temperature on the Ge content at the oxidation front, as measured by x-ray diffraction, is examined and supported by simulation results. A model for determination of the Ge content in the pile-up layer is presented along with appropriate values for the activation energy and pre-exponential constant for diffusion of Si in Si 1-X Ge X . This model may also be used for determination of the diffusivity of Si in Si 1-X Ge X by fitting the model results to the measured Ge concentration in the pile-up layer. It is observed that the Ge content at the oxidation front is a function of temperature and varies linearly between 64% at 800 C and 36% at 1000 C. However, the Ge content is largely independent of oxide thickness and the Ge content in the initial SiGe layer. When the Ge concentration at the oxidation front is considered, the experimental results presented here indicate that the oxidation rates of SiGe closely match those of Si and provide evidence that the presence of Ge in very thin films of SiGe does not lead to enhanced or retarded oxidation rates as compared to Si.

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Section: Introductionmentioning

confidence: 99%

Ge concentrations in pile-up layers of sub-100-nm SiGe films for nano-structuring by thermal oxidation

Long

Galeckas

Kuznetsov

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A comparative analysis of oxidation rates for thin films of SiGe versus Si

Long

Galeckas

Kuznetsov

2012

Physica Status Solidi (a)

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In order to evaluate the role of Ge as a catalyst or inhibitor for the oxidation process in SiGe, oxidation rates for sub‐100‐nm films of SiGe are examined and compared to previous reports and established models for Si oxidation. Values for the Ge concentration in the pile‐up layer at the oxidation interface are considered as well as the more traditional approach of considering the Ge content in the as‐grown SiGe film. The experimental results presented here indicate that oxidation rates for SiGe closely match those of Si and provide evidence that the presence of Ge in very thin films of SiGe does not lead to enhanced or retarded oxidation rates as compared to Si. This comparative analysis is performed with a focus on oxidation of epitaxial thin films of Si1−xGex in dry O2 at 1 atm at 800, 850, 900, 950, and 1000 °C.

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Study of Ge bonding and distribution in plasma oxides of Si1−xGex alloys

Seck

Devine²,

Hernandez³

et al. 1998

Applied Physics Letters

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Secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) absorption have been studied in thin oxides of Si1−xGex grown by plasma oxidation. SIMS analysis reveals that Ge can migrate to the oxide film surface leaving the oxide in the SiGe interface region Ge-depleted. This is in contrast to thermally grown oxides. Water selectively attacks the Ge-rich part of the oxide. In the FTIR spectra of the SiGe oxides, specific peaks identified with the vibration of O in Si–O–Ge and Ge–O–Ge bonds have been observed for the first time. These latter observations confirm that for the plasma oxidized films, the Ge is chemically bonded in the oxide network.

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Atomic Oxidation of Ultra Thin SiGe Using Afterglow Oxygen Plasma

Cited by 5 publications

References 11 publications

Ge concentrations in pile-up layers of sub-100-nm SiGe films for nano-structuring by thermal oxidation

Ge concentrations in pile-up layers of sub-100-nm SiGe films for nano-structuring by thermal oxidation

A comparative analysis of oxidation rates for thin films of SiGe versus Si

Study of Ge bonding and distribution in plasma oxides of Si1−xGex alloys

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