Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism

Teys, S. A.

doi:10.1016/b978-0-12-810512-2.00011-1

Cited by 3 publications

(4 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The corresponding critical thickness of the transition equals to 4.8 ML 100 . Moreover, 'star' signs in figure 4 depict the experimental values of the average sizes of quantum dots in the Ge/Si(100), Ge/Si(111), and GeSn/Si (100) systems after the results of the works [22,30,[49][50][51][52], which are qualitatively correspond to the theoretical estimations of this paper.…”

Section: Resultssupporting

confidence: 80%

“…It should be noted, that the results of the calculations are in a good agreement with the experimental data [18,22,30,33,[49][50][51][52][53][54]. For example, for the growth temperature T=500 °C and the germanium deposition rate V=0.03 ML s −1 the proposed theoretical model predicts for the silicon (111) surface the mean lateral size of quantum dots ≈90 nm with the surface density ≈1.2 × 10 9 cm −2 .…”

Section: Resultssupporting

confidence: 75%

“…In turn, Ge clusters on the Si(111) surface have the shape of the triangular pyramids with the {113} side faces. Their height to lateral size ratio is about 0.1-0.13 [13,[18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

“…The investigation and comparative analysis of germanium islands growth on the two types of substrates (Si(100) and Si(111)) were conducted in a number of works, for example [13,[18][19][20][21][22][23]. It was shown, that for the same growth conditions average size of islands on the Si(111) surface is 5-8 times higher, while their surface density is lower, than on the Si(100) surface.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Comparative analysis of germanium–silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

2018

View full text Add to dashboard Cite

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano-and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

show abstract