As a result of its high carrier mobility
and peculiar phase transition,
Ag2Se has been attracting increasing interest for applications
that include thermoelectric power generation, solid electrolytes,
and resistive random access memory devices. However, the narrow-band
gap characteristics and excellent optoelectronic properties of the
material are usually neglected or not used well. Here, we report on
a simple Ag2Se/p-Si heterostructure position-sensitive
detector (PSD) based on the lateral photovoltaic effect (LPE) and
investigate the optoelectronic properties of this device for the first
time. The broad-band performance, ultrafast response speed, and self-powered
operation of the PSD are exploited, and the detector’s response
performance is improved drastically by coupling of the photovoltaic
and pyroelectric effects. A good linearity was observed for the laser
position-dependent lateral photovoltage (LPV) response over a wide
spectrum from the visible range to the near-infrared region. The effects
of illumination power, laser wavelength, and switching frequency on
the transient LPV response when modulated by the pyro-phototronic
effect were investigated and discussed systematically, with an enhancement
ratio of as large as 1797% being achieved. In addition, the response
rise/fall times were reduced to 3/5 μs, respectively. The results
presented here enable fundamental comprehension of the pyro-phototronic
effect-based PSD and provide an accessible route toward the design
and performance optimization of such a PSD.