2018
DOI: 10.1088/1361-6668/aaf268
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Atomic-scale analyses of Nb3Sn on Nb prepared by vapor diffusion for superconducting radiofrequency cavity applications: a correlative study

Abstract: We report on atomic-scale analyses of the microstructure of an Nb 3 Sn coating on Nb, prepared by a vapor diffusion process for superconducting radiofrequency (SRF) cavity applications using transmission electron microscopy (TEM), electron backscatter diffraction (EBSD) and first-principles calculations.Epitaxial growth of Nb 3 Sn on a Nb substrate is found and four types of orientation relationships (ORs) at the Nb 3 Sn/Nb interface are identified by electron diffraction or high-resolution scanning transmissi… Show more

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Cited by 41 publications
(49 citation statements)
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“…This result indicates that GB diffusion of Sn so fast that there is not a concentration gradient along the GB [50]. Short-circuit diffusion of Sn along GBs (D gb ) is still faster by more than three orders of magnitude than bulk diffusion in Nb 3 Sn (D b ) at 1100 o C; the estimated diffusion lengths of Sn in bulk Nb 3 Sn and in GBs at 1100 o C per 1 hour (√4 ) are ~200 nm and ~120 μm, respectively [15,51]. The root-mean square bulk diffusion distance of Sn at 1100 o C is larger than the GB diameter (ϭ = 3 nm) but much smaller than the grain diameter (d = 2 μm), implying that GB diffusion is still the primary path of Sn diffusion.…”
Section: Origin Of Sn Segregation At Gbs In Nb 3 Snmentioning
confidence: 99%
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“…This result indicates that GB diffusion of Sn so fast that there is not a concentration gradient along the GB [50]. Short-circuit diffusion of Sn along GBs (D gb ) is still faster by more than three orders of magnitude than bulk diffusion in Nb 3 Sn (D b ) at 1100 o C; the estimated diffusion lengths of Sn in bulk Nb 3 Sn and in GBs at 1100 o C per 1 hour (√4 ) are ~200 nm and ~120 μm, respectively [15,51]. The root-mean square bulk diffusion distance of Sn at 1100 o C is larger than the GB diameter (ϭ = 3 nm) but much smaller than the grain diameter (d = 2 μm), implying that GB diffusion is still the primary path of Sn diffusion.…”
Section: Origin Of Sn Segregation At Gbs In Nb 3 Snmentioning
confidence: 99%
“…Several studies [12][13][14][15] have been performed to investigate the structural defects in Nb 3 Sn coatings, such as abnormally thin-grains, compositional variations, and Sn-deficient Nb 3 Sn phases [1,8,12], which may be responsible for the Q 0 -slope and quenching, which is a loss of superconductivity. Orientation relationships between Nb substrates and Nb 3 Sn films were measured and the Nb 3 Sn/Nb heterophase interfaces are demonstrated to play a critical role in the formation of thin-grains and Sn-deficient regions [15]. Another candidate for causing degradation of the superconducting properties of Nb 3 Sn SRF cavities is grain-boundaries (GBs).…”
Section: Introductionmentioning
confidence: 99%
“…In addition to surface roughness, the alloyed nature of these materials often leads to variations in material parameters, such as Sn concentration, that can have a strong effect on the superconducting properties [38][39][40][41][42][43] . To guide future development and keep pace with experimental advancements, more sophisticated theoretical and computational tools are needed to identify the relevant physics for vortex nucleation and quantify their effect on H sh in real materials.…”
Section: Introductionmentioning
confidence: 99%
“…The results of this work show that, despite the obvious non-stoichiometry and inhomogeneity of superconducting properties, grain boundaries, Nb inclusions, and incomplete Al2O3 layers, our multilayers exhibit the quality factors on par of those of cavity-grade bulk Nb at 4K and low RF power. The significant local non-stoichiometry of thick (a few micron) polycrystalline Nb3Sn coatings of Nb cavities 20,27 , as well as Sn depletion at grain boundaries in Nb3Sn [34][35][36][37] have been well documented in the literature. Yet, despite these materials issues which are also characteristic of 1-3 m thick Nb3Sn films used in SRF cavities 38 , our Nb3Sn SIS structures exhibit higher low-field Q values than Nb at T > 6K 20 , consistent with the larger superconducting energy gap Δ Nb3Sn ≈ 2Δ Nb and a lower BCS surface resistance ∝ low-field quality factors of Nb3Sn to the significant non-stoichiometry and materials imperfections but also suggest that the SRF performance of Nb3Sn coatings can be further improved by materials treatments.…”
Section: Discussionmentioning
confidence: 96%