2008
DOI: 10.1380/ejssnt.2008.301
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Atomic-Scale Analysis of Self-Positioning Nanostructures

Abstract: We performed an atomic-scale analysis of self-positioning nanostructures using the atomic-scale finite element method (AFEM) and Kriging interpolation technique. Equilibrium atomic configurations are determined for varying structure thicknesses and results are compared with the continuum mechanics solution under plane strain conditions. We observed significant decrease of the equilibrium curvature radius when the structure thickness is less than 40 nm. It is found that large compressive strains near the free s… Show more

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Cited by 3 publications
(5 citation statements)
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“…The optical and dielec tric properties of the nanoparticles of GaAs covered with SiO 2 have not been investigated to date, and the nanoparticles and with inverted placement of components (GaAs is outside) were not produced. The molecular dynamic calculations [6][7][8][9] suggest that the Tersoff potential can adequately reproduce the physical properties of a multicompo nent system.…”
Section: Siomentioning
confidence: 99%
See 1 more Smart Citation
“…The optical and dielec tric properties of the nanoparticles of GaAs covered with SiO 2 have not been investigated to date, and the nanoparticles and with inverted placement of components (GaAs is outside) were not produced. The molecular dynamic calculations [6][7][8][9] suggest that the Tersoff potential can adequately reproduce the physical properties of a multicompo nent system.…”
Section: Siomentioning
confidence: 99%
“…The parameters of the Tersoff potentials for silicon, oxygen, gallium, and arsenic are tabulated in the table [8,9]. Here, the deficiently physically justified param eter is assumed equal to one.…”
Section: Siomentioning
confidence: 99%
“…The Tersoff potential parameters for silicon, oxy gen, gallium, and nitrogen are listed in the table [14,15]. Potentials for Si, O, and N contain optimized parameters.…”
Section: Computer Modelmentioning
confidence: 99%
“…Potentials for Si, O, and N contain optimized parameters. The procedure selected for the optimiza tion of potential parameters involved simultaneous fit ting of energy and forces to the values obtained in cal culations by the density functional theory method 1, , Note: Parameter values for silicon, oxygen, and nitrogen were obtained in [14]; parameters for gallium were taken from [15].…”
Section: Computer Modelmentioning
confidence: 99%
“…Many researchers have used continuum modeling 13, 14, 2426 and atomic modeling 2729 to study scrolling in multilayer nanostructures. Multiscale modeling approach is also available to combine both nanoscale atomic behaviors and macroscopic deformation.…”
mentioning
confidence: 99%