Atomic-scale control of competing electronic phases in ultrathin LaNiO3

King, P. D. C.; Wei, Haofei I.; Nie, Yuefeng; Uchida, Masaki; Adamo, Carolina; Zhu, Shaobo; He, Xu; Božović, I.; Schlom, D. G.; Shen, Kaiyuan

doi:10.1038/nnano.2014.59

Cited by 196 publications

(181 citation statements)

References 36 publications

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“…LaNiO 3 exhibits a rhombohedral structural distortion [25], which has been observed experimentally in our films via superstructure in low-energy electron diffraction measurements [14]. We perform DFT calculations for two structures: a hypothetical cubic structure [shown in Fig.…”

Section: B Reference Band Structurementioning

confidence: 56%

“…[14]. All ARPES data reported here were obtained with a VG Scienta R4000 electron analyzer using He Iα radiation (hν = 21.2 eV) at a measurement temperature of T = 20 K and with 8 meV energy resolution.…”

Section: Methodsmentioning

confidence: 99%

“…All ARPES data reported here were obtained with a VG Scienta R4000 electron analyzer using He Iα radiation (hν = 21.2 eV) at a measurement temperature of T = 20 K and with 8 meV energy resolution. Because we are interested in the correlated-metal properties here, we use films with a 10 pseudocubic unit cell thickness where a bulklike Fermi surface has been observed, well away from the previously reported thickness-driven MIT [14].…”

Section: Methodsmentioning

confidence: 99%

“…We determine the value of k z corresponding to this photon energy as described in Ref. [14]. Due to surface sensitivity, the photoemission measurements integrate over a range of k z , which is represented by the finite height of the slab along k z in Fig.…”

Section: B Reference Band Structurementioning

confidence: 99%

“…LaNiO 3 has already been characterized experimentally via ARPES [14][15][16], optical conductivity [17][18][19], and thermodynamic measurements [20][21][22], as well as theoretically with DFT [23][24][25], DFT + DMFT [6,8,[26][27][28][29], and model system [30][31][32] calculations, and a variety of measurements of m /m have previously appeared (to be discussed more later). ARPES offers a particularly direct measure of a material's mass enhancement via momentum-resolved access to the electronic Green's function, which is the fundamental quantity that characterizes electron propagation in a material:…”

Section: Introductionmentioning

confidence: 99%

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Quantifying electronic correlation strength in a complex oxide: A combined DMFT and ARPES study ofLaNiO3

et al. 2015

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The electronic correlation strength is a basic quantity that characterizes the physical properties of materials such as transition metal oxides. Determining correlation strengths requires both precise definitions and a careful comparison between experiment and theory. In this paper, we define the correlation strength via the magnitude of the electron self-energy near the Fermi level. For the case of LaNiO 3 , we obtain both the experimental and theoretical mass enhancements m /m by considering high resolution angle-resolved photoemission spectroscopy (ARPES) measurements and density functional + dynamical mean field theory (DFT + DMFT) calculations. We use valence-band photoemission data to constrain the free parameters in the theory and demonstrate a quantitative agreement between the experiment and theory when both the realistic crystal structure and strong electronic correlations are taken into account. In addition, by considering DFT + DMFT calculations on epitaxially strained LaNiO 3 , we find a strain-induced evolution of m /m in qualitative agreement with trends derived from optics experiments. These results provide a benchmark for the accuracy of the DFT + DMFT theoretical approach, and can serve as a test case when considering other complex materials. By establishing the level of accuracy of the theory, this work also will enable better quantitative predictions when engineering new emergent properties in nickelate heterostructures.

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Section: B Reference Band Structurementioning

confidence: 56%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: B Reference Band Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quantifying electronic correlation strength in a complex oxide: A combined DMFT and ARPES study ofLaNiO3

et al. 2015

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Thickness Dependent Properties in Oxide Heterostructures Driven by Structurally Induced Metal–Oxygen Hybridization Variations

Liao

Gauquelin

Green

et al. 2017

Adv Funct Materials

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Thickness-driven electronic phase transitions are broadly observed in different types of functional perovskite heterostructures. However, uncertainty remains whether these effects are solely due to spatial confinement, broken symmetry, or rather to a change of structure with varying film thickness. Here, this study presents direct evidence for the relaxation of oxygen-2p and Mn-3d orbital (p-d) hybridization coupled to the layer-dependent octahedral tilts within a La2/3Sr1/3MnO3 film driven by interfacial octahedral coupling. An enhanced Curie temperature is achieved by reducing the octahedral tilting via interface structure engineering. Atomically resolved lattice, electronic, and magnetic structures together with X-ray absorption spectroscopy demonstrate the central role of thickness-dependent p-d hybridization in the widely observed dimensionality effects present in correlated oxide heterostructures

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Crystal Symmetry Engineering in Epitaxial Perovskite Superlattices

Ding

Yang

Leng

et al. 2021

Adv Funct Materials

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Interface plays a critical role in determining the physical properties and device performance of heterostructures. Traditionally, lattice mismatch, resulting from the different lattice constants of the heterostructure, can induce epitaxial strain. Over past decades, strain engineering has been demonstrated as a useful strategy to manipulate the functionalities of the interface. However, mismatch of crystal symmetry at the interface is relatively less studied due to the difficulty of atomically structural characterization, particularly for the epitaxy of low symmetry correlated materials on the high symmetry substrates. Overlooking those phenomena restrict the understanding of the intrinsic properties of the as‐ determined heterostructure, resulting in some long‐standing debates including the origin of magnetic and ferroelectric dead layers. Here, perovskite LaCoO3‐SrTiO3 superlattice (SL) is used as a model system to show that the crystal symmetry effect can be isolated by the existing interface strain. Combining the state‐of‐art diffraction and electron microscopy, it is found that the symmetry mismatch of LaCoO3‐SrTiO3 SL can be tuned by manipulating the SrTiO3 layer thickness to artificially control the magnetic properties. The work suggests that crystal symmetry mismatch can also be designed and engineered to act as an effective strategy to generate functional properties of perovskite oxides.

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Atomic-scale control of competing electronic phases in ultrathin LaNiO3

Cited by 196 publications

References 36 publications

Quantifying electronic correlation strength in a complex oxide: A combined DMFT and ARPES study ofLaNiO3

Quantifying electronic correlation strength in a complex oxide: A combined DMFT and ARPES study ofLaNiO3

Thickness Dependent Properties in Oxide Heterostructures Driven by Structurally Induced Metal–Oxygen Hybridization Variations

Crystal Symmetry Engineering in Epitaxial Perovskite Superlattices

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