Atomic-scale control of hydrogen bonding on a bare Si(100)-2<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>×</mml:mo></mml:math>1 surface

Labidi, Hatem; Kantorovich, Lev; Riedel, Damien

doi:10.1103/physrevb.86.165441

Cited by 18 publications

(12 citation statements)

References 59 publications

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“…Re imaging revealed the newly H-terminated dimer. Similarly prepared H-terminated dimers have been previously described 30 . This capping of silicon dimers with H atoms was done to indicate the presence of multiple H atoms on the tip as a result of the H desorption preparation process.…”

Section: Resultsmentioning

confidence: 99%

Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface

Labidi¹,

Koleini²,

Huff³

et al. 2017

Nat Commun

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The origin of bond-resolved atomic force microscope images remains controversial. Moreover, most work to date has involved planar, conjugated hydrocarbon molecules on a metal substrate thereby limiting knowledge of the generality of findings made about the imaging mechanism. Here we report the study of a very different sample; a hydrogen-terminated silicon surface. A procedure to obtain a passivated hydrogen-functionalized tip is defined and evolution of atomic force microscopy images at different tip elevations are shown. At relatively large tip-sample distances, the topmost atoms appear as distinct protrusions. However, on decreasing the tip-sample distance, features consistent with the silicon covalent bonds of the surface emerge. Using a density functional tight-binding-based method to simulate atomic force microscopy images, we reproduce the experimental results. The role of the tip flexibility and the nature of bonds and false bond-like features are discussed.

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Section: Resultsmentioning

confidence: 99%

Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface

Labidi¹,

Koleini²,

Huff³

et al. 2017

Nat Commun

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“…2(d)] has been observed for the spurious DB production effect, it remains possible that careful tip engineering may dramatically reduce or control this effect, with a very low spurious DB production rates achieved, 11 and even selective passivation of the Si surface by tips saturated with hydrogen. 25,26 …”

Section: Discussionmentioning

confidence: 98%

Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen

Ballard¹,

Owen²,

Alexander³

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The production of spurious dangling bonds during the hydrogen depassivation lithography process on Si(100)-H is studied. It is shown that the number of spurious dangling bonds produced depends on the size of the primary pattern on the surface, not on the electron dose, indicating that the spurious dangling bonds are formed via an interaction of the liberated hydrogen with the surface. It is also shown that repassivation may occur if hydrogen depassivation lithography is performed near an already patterned area. Finally, it is argued that the product of the interaction is a single dangling bond next to a monohydride silicon on a silicon dimer, with a reaction probability much in excess of that previously observed.

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“…This provides clear differentiation from single DBs allowing for unambiguous assignment of the constructed atomic structures and has been described in detail previously. It is worth noting that the reversed switching may be realized for example by the application of the procedure introduced by Labidi et al 35 Manipulating a single molecule on (or out of ) the specific DB dimer is also a very attractive possibility to secure one logical input in a bi-stable way. 1 and applying the desorption procedure, we have constructed the surface logic gate as shown in Fig.…”

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confidence: 99%

Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface

et al. 2015

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The design and construction of the first prototypical QHC (Quantum Hamiltonian Computing) atomic scale Boolean logic gate is reported using scanning tunnelling microscope (STM) tip-induced atom manipulation on an Si(001):H surface. The NOR/OR gate truth table was confirmed by dI/dU STS (Scanning Tunnelling Spectroscopy) tracking how the surface states of the QHC quantum circuit on the Si(001):H surface are shifted according to the input logical status.

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Atomic-scale control of hydrogen bonding on a bare Si(100)-2×1 surface

Cited by 18 publications

References 59 publications

Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface

Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface

Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen

Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface

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