Charge
carrier dynamics at material surfaces and interfaces play
a fundamental role in controlling the performance of photocatalytic
reactions and photovoltaic devices; however, precise characterization
of the surface dynamical properties of a material with nanometer (nm)
and femtosecond (fs) spatial and temporal resolutions, respectively,
is a precondition for profound understanding and is thus urgently
needed. Many techniques have been developed to meet this demand, but
barely any of them have simultaneous excellent surface sensitivity
(depth resolution) and sufficient spatiotemporal resolutions, except
for a one-of-a-kind second-generation scanning ultrafast electron
microscope (S-UEM), which has been established and developed at KAUST
to provide direct and controllable dynamical information about the
ultrafast charge carrier dynamics and the localization of electrons
and holes on the photoactive material surface and interfaces. In this
feature article, the instrumentation, working principles, new capabilities,
and unique applications of S-UEM in the ultrafast characterization
of material surfaces and interfaces, including charge carrier injection,
surface carrier diffusion, surface carrier trapping, and recombination,
are systematically summarized and inspected. Future developments from
both theoretical and experimental perspectives are also discussed.