Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells

F, Ma S; L, Li; Kong, Qingbo; Xu, Yangsheng; M, Liu Q; Zhang, S; Zhang, X S; Han, Baohui; C, Qiu B; S, Xu B; D, Hao X

doi:10.1088/1674-1056/ac70b5

Cited by 3 publications

(2 citation statements)

References 36 publications

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“…Previous studies have adopted photoluminescence (PL) to analyze the intermixing degree of interfacial atoms by considering the change in the diffusion components rather than the exact effect of the interfacial strain and the microstructure on their optical properties [ 9 , 19 ]. Recently, we obtained the interfacial microstructure of epitaxial wafers by transmission electron microscopy and explained the effects of interfacial atomic segregation as well as interstitial atoms on the luminescence properties of QWs [ 20 , 21 , 22 , 23 ]. Therefore, the influence of strain-induced intermixing on the QW luminescence characteristic is complex and needs to be further explored.…”

Section: Introductionmentioning

confidence: 99%

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Yang,

Zhang,

et al. 2023

Materials

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Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO2-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier–well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO2 capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO2 layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO2 layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO2 and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality.

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Section: Introductionmentioning

confidence: 99%

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Yang,

Zhang,

et al. 2023

Materials

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“…Theoretically, considerable quantum algorithmic work is underway, such as cryptanalysis [5,6], to reduce the resources needed for implementing important classical algorithms. In recent years, a series of quantum algorithms were designed for machine learning problems in attempting to achieve potential quantum advantages, such as classification [7][8][9], clustering [10][11][12][13][14][15], linear regression [16][17][18], dimensionality reduction [19][20][21][22][23], matrix computation [24][25][26] and anomaly detection [27]. More progress on quantum machine learning algorithms can be found in Refs.…”

Section: Introductionmentioning

confidence: 99%

Quantum k -medoids algorithm using parallel amplitude estimation

Liu

Pan

et al. 2023

Phys. Rev. A

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Quantum computing is a promising new paradigm that can provide viable solutions to highcomplexity problems. k-medoids algorithm is a powerful clustering method ubiquitously used in data mining, image processing, pattern recognition, etc. The core of k-medoids is to perform cluster assignment and centre update, which are time-consuming for large datasets. Aïmeur et al. proposed a quantum k-medoids algorithm [E. Aïmeur, G. Brassard, and S. Gambs, Machine Learning 90, 261 (2013)] by quantizing the centre update. Nevertheless, it has a query complexity O(N 3/2 ) for one iteration, which is computationally expensive for a large N where N is the number of points. In this paper, we propose a complete quantum algorithm for k-medoids. Specifically, in cluster assignment, we devise a quantum subroutine to calculate the Manhattan distance between any two points and then assign all points to the closest centre in parallel, which is faster than what is achievable classically. In centre update, for a cluster, we use parallel amplitude estimation to calculate the average distance of each point to all the others. It makes our algorithm polynomially faster than Aïmeur et al.'s algorithm whose sum of distances of each point to all the others is computed by adding the distances one by one. Our quantum k-medoids algorithm, with time complexity O(N 1/2 ), achieves a polynomial speedup in N compared to the existing one.

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Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

Hao

Zhang

Sun

et al. 2022

ACS Appl. Mater. Interfaces

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The model system of the InGaN/GaN quantum wells (QWs), based on the first principles calculation, was chosen to understand the underlying mechanism of interfacial polarization and its synergic effect with the built-in electric field (B ef ) at the p−n junction in solar cells (SLs). The polarized electric field (P ef ) was generated due to the redistribution of electrons and holes at the interface; moreover, the P ef of InGaN/GaN heterostructure on the semipolar (01-11) GaN surface was consistent with that of on the N-polar (000-1) surface, which is on the lines of the B ef and favors the electron−hole separation efficiency in SLs. Furthermore, the growth of high-quality InGaN/GaN QWs on the semipolar (01-11) GaN surface was achieved. Such an atomic-scale investigation provides a fundamental understanding of the polarization chargeinduced P ef and its interaction coupling with B ef at the p−n junction, which could be generalized to polar material-based SLs.

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Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells

Cited by 3 publications

References 36 publications

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Quantum k -medoids algorithm using parallel amplitude estimation

Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

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