2010
DOI: 10.1143/jjap.49.06gj14
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Atomic-Scale Investigation of the Ti/Al(001) Interface: A Molecular Dynamics Simulation

Abstract: The intermixing characteristics of Ti thin film deposited on Al(001) substrate at atomic level were investigated by molecular dynamics simulation. The intermixing at Ti/Al(001) interface was limited within only the topmost layer of the Al(001) substrate at 300 K with 0.1 eV incident energy of a Ti atom. The mixing characteristics for Ti/Al(001) such as layer coverage function and mixing length were significantly different from those of the transition metals (TM; Fe, Co, and Ni)/Al(001) systems. The different i… Show more

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Cited by 4 publications
(3 citation statements)
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“…In this case, the equilibrium was maintained locally during the penetration process of the deposited Ti adatoms. 5) The energy barrier of incorporation for the Ti adatom into Fe(001), 2.56 eV, was obtained using the same method as our previous work on the Ti/Al(001) system 22) and this is even larger than that of Ti/Al(001) (1.15 eV), where the high incorporation energy barrier was the main reason for the small amount of surface intermixing.…”
Section: Molecular Dynamicsmentioning
confidence: 97%
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“…In this case, the equilibrium was maintained locally during the penetration process of the deposited Ti adatoms. 5) The energy barrier of incorporation for the Ti adatom into Fe(001), 2.56 eV, was obtained using the same method as our previous work on the Ti/Al(001) system 22) and this is even larger than that of Ti/Al(001) (1.15 eV), where the high incorporation energy barrier was the main reason for the small amount of surface intermixing.…”
Section: Molecular Dynamicsmentioning
confidence: 97%
“…3, the local acceleration of Ti/Fe(001) ranged from 1.44 to 3.74 eV with the highest value on the hollow site (3.74 eV) and the lowest value on the on-top site of the Fe(001) substrate atom (1.44 eV). In our previous simulation work on the Ti/Al(001) system, 22) the local acceleration value of Ti on Al(001) surface was 2.54 eV in average, which is not sufficiently different not only from those of other TM thin film systems 5,6,21,22) but also that of Ti/ Fe(001) of this study, 2.59 eV. Instead, the energy barrier of Ti atom into Al(001) substrate was exclusively higher than other systems.…”
Section: Molecular Dynamicsmentioning
confidence: 99%
“…The B2 to equilibrium L1 0 phase transformation during the c/a relaxation is also captured by this potential (refer Zope and Mishin [25] for further details). The potential has been used extensively for various MD studies including the size effect of Ti single crystal [26] and polycrystalline Al nanowire [27]; shear deformation of Ti3Al [28], γ-TiAl [29], and TiAl [30], and TiAl/Ti3Al [31]; alloying of Al coated Ti nanoparticle [32]; void growth in γ-TiAl [33]; screw dislocations in γ-TiAl [34]; nanoindentation in γ-TiAl [35]; interface study of Ti/Al [36]; phase transformation in Ti-Al [37]; and liquid phase of Ti-Al [38].…”
Section: Inter-atomic Potential Detailsmentioning
confidence: 99%