Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Wu, Xing; Yu, Kunpeng; Kyu, Dong; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Li, Kun; Liu, Qi; Sun, Litao; Pey, K. L.

doi:10.1002/advs.201800096

Cited by 31 publications

(19 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[11,35] It should be noted that the self-rectifying feature of memristors is crucial for overcoming the crosstalk problems in crosspoint array structures. [36][37][38] Let us directly demonstrate the effect of the self-rectifying characteristics of Device 2 on the crosstalk problems in the crosspoint structure. We fabricated a prototype array of 2 × 2 Device 2 (see Figure S6, Supporting Information) and performed the actual addressing test in the worst-case scenario in which the cells near the selected device were set to the LRS (case 2 in Figure S7, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Park

Kim

Lee

2020

Adv Elect Materials

View full text Add to dashboard Cite

In flexible neuromorphic electronics, solution‐processed organic memristors are important elements to perform memory functions. Despite considerable development for improving performances of organic memristors, the devices still exhibit the poor reliability and uniformity due to the stochastic characteristics of the conductive filament (CF) growth. Herein, the effective concept of introducing the interfacial load polymer (ILP) layers that control the CF growth in flexible organic memristors is demonstrated. In the flexible organic memristor, the ILP serves as an internal load resistor that regulates the CF growth in the electrolyte medium and the electron blocking layer, hence realizing self‐rectifying characteristics. In particular, the ILP provides the self‐compliance current of the device, which delicately limits the overgrowth of CFs. The flexible device delivers higher electrical performance (better reliability, uniformity, and the switching currents) than conventional devices without the ILP. Moreover, the device operates stably under repeated bending–straightening deformations. This unprecedented concept of achieving the capabilities of self‐compliance current and self‐rectifying property in a single memristor will provide a practical platform for constructing and realizing next‐generation flexible neuromorphic systems.

show abstract

Section: Resultsmentioning

confidence: 99%

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Park

Kim

Lee

2020

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…Figure A,B show the location of Er dopant within MoS 2 by high‐angle annular dark field scanning transmission electron microscopy (HAADF‐STEM) with the correction of spherical (CS) aberration. Because the HAADF intensity is proportional to the atomic number (Z), and Er has a larger atomic number ( Z = 68) than S ( Z = 14) and Mo ( Z = 42), Er atom, can be easily recognized for its stronger intensity in HAADF‐STEM images . To study the structural characterization, the PL spectra of prepared MoS 2 :Er samples have been further measured.…”

Section: Doping Defectsmentioning

confidence: 88%

“…Because the HAADF intensity is proportional to the atomic number (Z), and Er has a larger atomic number (Z = 68) than S (Z = 14) and Mo (Z = 42), Er atom, can be easily recognized for its stronger intensity in HAADF-STEM images. 84 To study the structural characterization, the PL spectra of prepared MoS 2 :Er samples have been further measured. Figure 2C shows PL spectra of the bilayer MoS 2 :Er samples under 488 nm (2.58 eV which is larger than the band gap of 2D MoS 2 ) excitation.…”

Section: Doping Defectsmentioning

confidence: 99%

Characterization of atomic defects on the photoluminescence in two‐dimensional materials using transmission electron microscope

Zhang

Wang

et al. 2019

InfoMat

Self Cite

View full text Add to dashboard Cite

Two‐dimensional material (2D) that possesses atomic thin geometry and remarkable properties is a star material for the fundamental researches and advanced applications. Defects in 2D materials are critical and fundamental to understand the chemical, physical, and optical properties. Photoluminescence arises in 2D materials owing to various physical phenomena including activator/dopant‐induced luminescence and defect‐related emissions, and so forth. With the advanced transmission electron microscopy (TEM) technologies, such as aberration correction and low voltage technologies, the morphology, chemical compositions and electronic structures of defects in 2D material could be directly characterized at the atomic scale. In this review, we introduce the applications of state‐of‐the‐art TEM technologies on the studies of the role of atomic defects in the photoluminescence characteristics in 2D material. The challenges in spatial and time resolution are also discussed. It is proved that TEM is a powerful tool to pinpoint the relationship between the defects and the photoluminescence characteristics.

show abstract

“…Since the successful preparation of graphene, the employment of 2D materials has become a possibility, triggering a boom in the study of 2D materials. The continuous improvement of 2D material preparation technology [7] and manipulation of materials at the atomic scale [57,58], have greatly promoted the development of 2D materials and 2D devices [59,60,61,62]. 2D materials are widely applied in nanoelectronics and optoelectronics due to their outstanding optical, electronic, and other physical properties [63].…”

Section: Thermoelectric and 2d Materialsmentioning

confidence: 99%

Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity

Dong

Fang

et al. 2018

Molecules

Self Cite

View full text Add to dashboard Cite

The emergence and development of two-dimensional (2D) materials has provided a new direction for enhancing the thermoelectric (TE) performance due to their unique structural, physical and chemical properties. However, the TE performance measurement of 2D materials is a long-standing challenge owing to the experimental difficulties of precise control in samples and high demand in apparatus. Until now, there is no universal methodology for measuring the dimensionless TE figure of merit (ZT) (the core parameter for evaluating TE performance) of 2D materials systematically in experiments. Raman spectroscopy, with its rapid and nondestructive properties for probing samples, is undoubtedly a powerful tool for characterizing 2D materials as it is known as a spectroscopic ‘Swiss-Army Knife’. Raman spectroscopy can be employed to measure the thermal conductivity of 2D materials and expected to be a systematic method in evaluating TE performance, boosting the development of thermoelectricity. In this review, thermoelectricity, 2D materials, and Raman techniques, as well as thermal conductivity measurements of 2D materials by Raman spectroscopy are introduced. The prospects of obtaining ZT and testing the TE performance of 2D materials by Raman spectroscopy in the future are also discussed.

show abstract

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Cited by 31 publications

References 33 publications

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Characterization of atomic defects on the photoluminescence in two‐dimensional materials using transmission electron microscope

Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity

Contact Info

Product

Resources

About