We present a systematic experimental and theoretical study of the first-order phase transition of epitaxially grown MnAs thin films under biaxial tensile stress. Our results give direct information on the dependence of the phase-transition temperature of MnAs films on the lattice parameters. We demonstrate that an increase of the lattice constant in the hexagonal plane raises the phase-transition temperature (T p ), while an increase of the perpendicular lattice constant lowers T p . The results of calculations based on density functional theory are in good agreement with the experimental ones. Our findings open exciting prospects for magneto-mechanical devices, where the critical temperature for ferromagnetism can be engineered by external stress. DOI: 10.1103/PhysRevLett.95.077203 PACS numbers: 75.70.Ak, 61.50.Ks, 68.60.2p MnAs presents a first-order phase transition at 40 C, changing from ferromagnetic/hexagonal ( -phase NiAs structure) to paramagnetic/orthorhombic ( -phase MnP structure) [1]. This magneto-structural phase transition has important implications for technological applications. The magneto-elastic effects are useful for transducers [2], while their magneto-caloric properties are interesting for developing refrigeration devices [3]. In recent years, the attention given to MnAs has been strongly amplified by the possibility of epitaxial growth on GaAs substrates [4]. The integration of ferromagnetic materials with semiconductors is a subject of great interest for spintronics, and MnAs grown on GaAs is a strong candidate for spin injection devices [5].From the theoretical point of view, the treatment of the first-order phase transition of materials with magnetoelastic properties is a rather complex issue. Early simple phenomenological thermodynamic treatments based on the localized Heisenberg model [1] have been used to explain the properties of MnAs under an external hydrostatic pressure and magnetic field. Sophisticated band structure calculations are required for a precise quantitative analysis, although in this case it is difficult to introduce a statistical treatment to describe a first-order phase transition [6].We present an experimental and theoretical investigation of the magneto-structural phase transition of MnAs films grown on GaAs. Those films present a nonabrupt phase transition with the coexistence [7] of the two phases in form of periodically alternating stripes [8,9] for a large temperature range ( 20 C) [7][8][9][10]. As a result of this phase coexistence a considerable fraction of the volume of the MnAs epitaxial films is usually in the paramagnetic phase at 30 C, which is a strong limitation for room temperature spintronic devices. The growth of MnAs films on different crystal orientations has been suggested as an alternative that can provide higher phase-transition temperatures [10]. The detailed mechanism that associates the crystal distortion (lattice parameter variation) with the phase-transition temperature is, however, still unclear, This issue was addressed in the ear...