2022
DOI: 10.1016/j.mtphys.2022.100922
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Atomic-scale observation of strain-dependent reversible topotactic transition in La0.7Sr0.3MnOx films under an ultra-high vacuum environment

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Cited by 8 publications
(9 citation statements)
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“…The work carried by Hu et al used the scanning transmission electron microscopy with in situ heating capability to observe the structural evolution of the LaSrMnO x (LSMO) thin film during annealing in high vacuum (10 −9 Torr) at 500 °C under different strain states. [ 44 ] A fully transition from PV‐LSMO to BM‐LSMO has been detected and interestingly, the whole process is proved to be reversible. However, the oxygen diffusion process and the related topotactic transition is strongly strain dependent ( Figure ).…”
Section: Mechanism Of Oxygen‐related Topotactic Transitionmentioning
confidence: 99%
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“…The work carried by Hu et al used the scanning transmission electron microscopy with in situ heating capability to observe the structural evolution of the LaSrMnO x (LSMO) thin film during annealing in high vacuum (10 −9 Torr) at 500 °C under different strain states. [ 44 ] A fully transition from PV‐LSMO to BM‐LSMO has been detected and interestingly, the whole process is proved to be reversible. However, the oxygen diffusion process and the related topotactic transition is strongly strain dependent ( Figure ).…”
Section: Mechanism Of Oxygen‐related Topotactic Transitionmentioning
confidence: 99%
“…h,l) The enlarged oxidized PV phase marked by green and yellow area in (g) and (k). Reproduced with permission [44]. Copyright 2022, Elsevier.…”
mentioning
confidence: 99%
“…Multiple methods have been proposed for controlling the orientation of OVCs in various BM-structured oxide thin films. For the La 1– x Sr x MnO 3 system, the control of the OVCs' orientation has been realized by electrothermal oxygen vacancy migration, annealing P-phase in a vacuum, and the strain . For BM-SrCoO 2.5 (SCO), it is commonly believed that the OVCs tend to form in the vertical planes (vertical OVCs) when grown on substrates that offer tensile biaxial strains, while parallel to the horizontal planes (horizontal OVCs) upon compressive strains. , Many other methods including electric field, proton-induced filling, and noble-metal-assisted fast interfacial oxygen migration , have also been utilized to control the OVCs in BM-SCO.…”
Section: Introductionmentioning
confidence: 99%
“…36,37 In addition, LSMO exhibits a higher affinity for oxygen compared to other TPT materials, which makes the non-oxygen fully stoichiometric high-resistance structure of La 0.7 Sr 0.3 MnO 3Àd , prone to oxygen absorption and transformation into a fully oxidized conductive perovskite structure of La 0.7 Sr 0.3 MnO 3 . 38 This characteristic suggests that LSMO possesses the potential of replacing SRO as the bottom electrode in TPT memristors. At present, there are few studies on TPT memristors with LSMO as the bottom electrode.…”
Section: Introductionmentioning
confidence: 99%